The invention relates to the technical field of semiconductors, and particularly discloses a light-emitting diode comprising a substrate, an epitaxial layer, a first passivation layer, inner electrode layers, a second passivation layer and an outer electrode layer, wherein the second passivation layer is provided with fourth slots, and second outer electrode areas are electrically connected with a second inner electrode layer through the fourth slots; and larger than or equal to 2 fourth slots corresponding to each second outer electrode area are arranged, and the fourth slots are arranged at intervals. By means of the mode, the technical problem caused by the fact that a cavity area is too large in the prior art can be solved, the push-pull force level after the light-emitting diode and a packaging support are welded is improved, and the mechanical performance of a light-emitting diode packaging product is improved; and on the other hand, the uniformity of current diffusion and thermal diffusion of the light-emitting diode product can be improved, so that the photoelectric property and the application reliability of the light-emitting diode product are improved.