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Laser system, and electronic device manufacturing method

A laser system and laser technology, applied in the direction of laser parts, lasers, laser devices, etc., can solve the problem of resolution reduction

Active Publication Date: 2021-04-09
极光先进雷射株式会社
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The spectral line width of natural oscillation of KrF and ArF excimer laser devices is wide, about 350 to 400 pm. Therefore, the laser light (ultraviolet light) projected onto the wafer through the projection lens on the exposure device side in a reduced size produces chromatic aberration and lowers the resolution.

Method used

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  • Laser system, and electronic device manufacturing method
  • Laser system, and electronic device manufacturing method
  • Laser system, and electronic device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0118] 4.1 Structure

[0119] 4.2 Action

[0120] 4.3 Processing example of the laser control unit

[0121] 4.4 Control example 1 of the first multi-semiconductor laser system

[0122] 4.5 Control example 1 of the second multi-semiconductor laser system

[0123] 4.6 Processing example of the solid-state laser system control unit

[0124] 4.7 Processing example of the first multi-line control unit

[0125] 4.8 Processing example of the second multi-line control unit

[0126] 4.9 Function / Effect

[0127] 4.10 Variations

[0128] 4.10.1 Control example 2 of the first multi-semiconductor laser system

[0129] 4.10.2 Control example 2 of the second multi-semiconductor laser system

Embodiment approach 2

[0131] 5.1 Structure

[0132] 5.2 Action

[0133] 5.2.1 Control example 3 of the first multi-semiconductor laser system

[0134] 5.2.2 Control example 3 of the second multi-semiconductor laser system

[0135] 5.3 Function / Effect

[0136] 5.4 Variations

[0137] 5.4.1 Control example 4 of the first multi-semiconductor laser system

[0138] 5.4.2 Control example 4 of the second multi-semiconductor laser system

[0139] 6. Modification 1 of the multi-semiconductor laser system

[0140] 6.1 Structure

[0141] 6.2 Action

[0142] 7. Modification 2 of the multi-semiconductor laser system

[0143] 7.1 Structure

[0144] 7.2 Action

[0145] 8. Specific example of spectrum monitor

[0146] 8.1 Example of Spectrum Monitor Using Spectrometer and Reference Laser Source

[0147] 8.1.1 Structure

[0148] 8.1.2 Action

[0149] 8.2 Example of Spectrum Monitor Using Heterodyne Interferometer

[0150] 8.2.1 Structure

[0151] 8.2.2 Actions

[0152] 8.2.3 Examples of beat signal...

Embodiment approach 3

[0174] 17.1 Structure

[0175] 17.2 Actions

[0176] 17.3 Control example of the third multi-semiconductor laser system

[0177] 17.4 Action / Effect

[0178] 17.5 Variations

[0179] 18. Manufacturing methods of electronic devices

[0180] 19. Other

[0181] Embodiments of the present disclosure will be described in detail below with reference to the drawings. The embodiment described below shows some examples of the present disclosure, and does not limit the content of the present disclosure. In addition, not all the configurations and actions described in the respective embodiments are essential to the configurations and actions of the present disclosure. In addition, the same reference numerals are assigned to the same structural elements, and overlapping explanations are omitted.

[0182] 1. Explanation of terms

[0183] 1.1 Definition of Excimer Laser Line Width Δλ

[0184] In this specification, the line width of 95% of the entire area of ​​the spectrum width of ...

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Abstract

A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes: a first plurality of semiconductor lasers that are single longitudinal mode lasers and are operated in continuous wave mode, with each semiconductor laser having a different wavelength; a first spectrum monitor; and a first beam combiner. The control unit controls the oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first plurality of semiconductor lasers so as to obtain an excimer laser beam having at least a target central wavelength or a target spectral linewidth commanded by an external device.

Description

technical field [0001] The present disclosure relates to methods of manufacturing laser systems and electronic devices. Background technique [0002] With the miniaturization and high integration of semiconductor integrated circuits, improvement in resolution is required in semiconductor exposure apparatuses. Hereinafter, the semiconductor exposure apparatus is simply referred to as “exposure apparatus”. Therefore, shortening of the wavelength of light output from the light source for exposure is progressing. A gas laser device is used as a light source for exposure instead of a conventional mercury lamp. Currently, as a gas laser device for exposure, a KrF excimer laser device that outputs ultraviolet rays with a wavelength of 248 nm and an ArF excimer laser device that outputs ultraviolet rays with a wavelength of 193 nm are used. [0003] As a current exposure technology, liquid immersion exposure has been put into practical use by filling the gap between the projectio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/10H01S3/067H01S3/0941H01S3/225H01S5/40
CPCH01S3/225H01S5/0092H01S3/2375H01S3/06754H01S3/2308H01S3/2366H01S5/0683H01S5/0687H01S5/4012G02F1/353G02F1/392H01S5/06821H01S5/06837H01S5/50
Inventor 三浦泰祐若林理
Owner 极光先进雷射株式会社