Three-dimensional integrated structure and manufacturing method thereof

A technology of three-dimensional integration and connecting holes, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing capacitance density and unresolved capacitance, so as to improve overall performance, reduce surface area, and increase nanocapacitance effect of density

Active Publication Date: 2021-04-13
FUDAN UNIV +1
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Problems solved by technology

However, it does not solve the problem of increasing the capacitance density while reducing the

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  • Three-dimensional integrated structure and manufacturing method thereof
  • Three-dimensional integrated structure and manufacturing method thereof
  • Three-dimensional integrated structure and manufacturing method thereof

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[0065]In order to make the objects, technical solutions, and advantages of the present invention, the technical solutions in the embodiments of the present invention will be described in connection with the drawings of the present invention, and will be described in connection with the drawings of the present invention. Embodiments, not all of the embodiments. Based on the embodiments of the present invention, those of ordinary skill in the art will belong to the scope of the present invention without all other embodiments obtained without creative labor. Unless otherwise defined, the technical terms used herein or scientific terms should be understood by those who have general skills in the art of the present invention. Similar words to "including" as used herein refers to the elements or objects of the previous article or objects that exhibit appear later in the word and their equivalents without excluding other elements or objects.

[0066]For the problems present in the prior art, ...

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Abstract

The invention provides a three-dimensional integrated structure, which comprises a shell, a first nano capacitor, a second nano capacitor, and a conductive assembly, wherein the first nano capacitor and the second nano capacitor are arranged up and down, and the shell is provided with two first through holes which are arranged at an interval; and the conductive assembly enables the first bottom metal electrode layer and the second bottom metal electrode layer to be electrically connected through the two first through holes, and enables the first top metal electrode layer and the second top metal electrode layer to be electrically connected. The first bottom metal electrode layer and the second bottom metal electrode layer are electrically connected through the two first through holes by the conductive assembly, so that the first top metal electrode layer and the second top metal electrode layer are electrically connected, and parallel arrangement of the first nano capacitor and the second nano capacitor is realized; the capacitor density is increased, and the overall performance of the capacitor is improved. In addition, the invention further provides a manufacturing method of the three-dimensional integrated structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional integrated structure and a manufacturing method thereof. Background technique [0002] At present, for portable electronic devices, batteries are still the main energy supply components. Although battery technology is constantly developing, a compromise still needs to be made between the capacity, volume and weight of the battery. Accordingly, some alternative power supply components with large capacity, light weight, and small size have been researched and developed, such as micro fuel cells, plastic solar cells, and energy harvesting systems. [0003] In all cases mentioned above, an energy buffer system is usually required to maintain a continuous and steady energy output. For example, fuel cell systems are generally believed to have slower start-up times and lower kinetic energy. Therefore, a hybrid system in which the fuel cell provides the basic...

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Application Information

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IPC IPC(8): H01L27/08H01L21/822
CPCH01L27/0805H01L21/8221
Inventor 朱宝陈琳孙清清张卫
Owner FUDAN UNIV
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