MOS transistor and method for improving source-drain doping concentration by utilizing ion implantation
A MOS transistor and ion implantation technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem that implanted impurity ions cannot be fully activated
Active Publication Date: 2021-04-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] The main purpose of the present invention is to provide a MOS transistor and a method for increasing the doping concentration of the source and drain by ion implantation. In the MOS transistor, a second region is formed in the surface region of the source and drain regions, and the second region is the same as that of the first region. Perform pre-amorphization implantation (PAI) and ion implantation on the surface, that is, before the second ion implantation, use Ge / As / Si pre-amorphization implantation (PAI) to perform surface amorphization treatment, and then perform doping Hetero-ion implantation, at this time, the dopant atoms have the same probability as the original lattice atoms to occupy the origin of the lattice, and the dopant atoms have more opportunities to occupy the origin of the lattice than before the non-amorphization implantation, and then perform source-drain annealing, Repairing the lattice structure activates the dopant atoms at the same time, which can increase the doping concentration of the source and drain to solve the technical problem that the implanted impurity ions in the MOS transistor cannot be fully activated in the prior art
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[0019] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0020] Figure 2f A partial cross-sectional view of a MOS transistor in one concept of the present invention is shown.
[0021] refer to Figure 2f , forming the gate 200 above the substrate 100; the substrate 100 may be a silicon substrate.
[0022] The gate dielectric layer 300 is located between the gate 200 and the substrate 100 , and the material of the gate dielectric layer 300 may be silicon dioxide.
[0023] The source a...
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The invention provides an MOS transistor and a method for improving source-drain doping concentration by utilizing ion implantation. The MOS transistor comprises a substrate with a gate, and a source-drain region positioned on the two sides of the gate, wherein the source-drain region comprises a first region and a second region located on the first region; the first region is formed in an ion implantation mode; and the second region is formed by adopting pre-amorphization implantation (PAI) and ion implantation on the first region. According to the MOS transistor, the second region is formed in the surface layer region of the source-drain region, and the second region is formed by performing pre-amorphization implantation (PAI) and ion implantation on the first region, so that the source-drain doping concentration can be improved.
Description
technical field [0001] The invention relates to the technical field of integrated circuit processing and manufacturing, in particular to a MOS transistor and a method for increasing source-drain doping concentration by using ion implantation. Background technique [0002] The performance of metal oxide field effect transistors (MOS transistors) has a decisive impact on the design of the entire integrated circuit. When forming source and drain regions in the MOS process, ion implantation is the most common method. In order to improve the performance of MOS transistors, it is necessary to Increase the doping concentration of impurity ions in the source and drain. When the doping concentration on one side of the semiconductor is high enough, the depletion region between the semiconductor and the metal will be very narrow, and the electrons are mainly field emission (Field Emission). At the bottom of the conduction band or near the bottom of the conduction band, electrons can di...
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IPC IPC(8): H01L29/78H01L29/08H01L29/36H01L21/336
CPCH01L29/78H01L29/0847H01L29/36H01L29/66477
Inventor 李梦华罗军许静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI