Gallium oxide SBD device and preparation method thereof

Abstract

The invention provides a gallium oxide SBD device and a preparation method thereof, and relates to the technical field of microelectronics. The gallium oxide SBD device comprises a Schottky contact region, a SiO2 isolation region, a terminal region, an N- epitaxial layer, an N+ substrate region and an ohmic contact region which are sequentially arranged in a layered manner from top to bottom, wherein the terminal region is located on the upper surface of the N-epitaxial layer and connected with the edge of the Schottky contact region, the terminal region is a continuous circle at the edge of the Schottky contact region, the terminal region is of a groove-shaped structure, and a groove matched with the groove-shaped structure is formed in the connecting end of the lower surface of the metal edge of the Schottky contact region and the terminal region. The beneficial effects of the technical scheme of the invention are that the terminal of a conventional SBD device is changed into a groove type or a step type under the condition that the breakdown voltage required by the conventional gallium oxide SBD device is satisfied, thereby simplifying the technology, reducing the manufacturing difficulty, improving the production efficiency, reducing the production cost, and improving the qualified rate of a product.

Description

Technical field[0001]The present invention relates to the field of microelectronics, particularly refers to a gallium oxide SBD device and a preparation method thereof.Background technique[0002]The β-Ga2O3 is a newly developed ultra-wide prohibited semiconductor material with a width of about 4.8 to 4.9 eV, and the breakdown electric field is 8 mV / cm, which is equivalent to 26 times Si, SiN, and more than 2 times. The BALIGA excellent value is 3000 times of Si; 8 times the SiC material and 4 times the GaN material; high frequency BALIGA excellent value is 150 times of Si material; SiC is 3 times; and 1.5 times of GaN material. For unipolar power devices of the same withstand voltage, the on-resistance can be reduced to 1 / 10 of the SIC, 1 / 3 of GaN, which can effectively reduce the power consumption of the device. The theoretical calculation shows that the vertical Schottky diode (SBD) prepared by 30 μm thick n-type Ga2O3 material, theoretical breakdown voltage can reach 24,000V, an...

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Problems solved by technology

[0003] However, traditional JTE and GR SBD devices generally use ion implantation technology, which is relatively complicated and has cumbersome manufacturing steps. The manufacturing process is relatively difficult, resulting in low production efficiency and a certain impact on the qualified rate of products.

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