Thermal field suspension single crystal furnace and method

Abstract

The invention discloses a thermal field suspension single crystal furnace and a method, the thermal field suspension single crystal furnace comprises a thermal insulation box, a crucible piece is arranged in the thermal insulation box, the bottom of the crucible piece is fixedly connected with a crucible tray, and the bottom of the crucible tray is fixedly connected with a crucible support rod. The first motor drives an adjusting sleeve to move downwards through a screw rod, so that a heat dissipation mechanism enters a flow guide cylinder to conduct heat insulation and dissipation, it is guaranteed that heat is not lost, then the inner wall of the flow guide cylinder is cleaned through a rotating mechanism, finally, temperature compensation is conducted on a heating sleeve through an electromagnetic temperature compensation mechanism, and the heating stability is guaranteed; the problems that an existing single crystal furnace thermal field is inaccurate in temperature control, stepped temperature control cannot be carried out, forming efficiency is affected, meanwhile, heat loss of the thermal field is serious due to heat dissipation of a formed silicon rod, more energy is consumed, energy cannot be saved, and the utilization rate of resources is reduced are solved, and the single crystal furnace has the advantages of being accurate in temperature control, capable of dissipating heat and capable of saving energy.

Description

technical field [0001] The invention relates to the technical field of single crystal furnaces, in particular to a thermal field suspended single crystal furnace and its method. Background technique [0002] At present, the Czochralski method is mainly used to produce single crystal silicon in a single crystal furnace. A crucible and a crucible side supporting the crucible are arranged in the single crystal furnace. After the heater on the outside of the crucible side heats the polysilicon raw material to form a melt, the seed crystal is inserted into the melt and undergoes the processes of seeding, shouldering, shoulder turning, equal diameter and finishing in sequence to obtain monocrystalline silicon rods. And the periphery of the heater is provided with a thermal insulation component to reduce heat loss. Usually, the thermal insulation component and its inner parts are collectively referred to as the thermal field. [0003] The temperature control of the thermal field o...

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Problems solved by technology

[0004] In order to solve the problems raised in the above-mentioned background technology, the purpose of the present invention is to provide a thermal field suspension single crystal furnace and its method, which have the advantages of precise temperature control, heat dissipation and energy saving, and solve the problem of insufficiency in the temperature control of the existing single crystal furnace thermal field. Accurate, stepwise temperature control cannot be performed, which affects the molding efficiency. At the same time, the heat dissipation of the formed silicon rod will cause serious heat loss in the thermal field, and consume more energy, which cannot save energy and reduce the problem of resource utilization.

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