Thermal field suspension single crystal furnace and method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 宁夏和光新材料有限公司
- Publication Date
- 2021-04-27
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Abstract
Description
technical field
[0001] The invention relates to the technical field of single crystal furnaces, in particular to a thermal field suspended single crystal furnace and its method. Background technique
[0002] At present, the Czochralski method is mainly used to produce single crystal silicon in a single crystal furnace. A crucible and a crucible side supporting the crucible are arranged in the single crystal furnace. After the heater on the outside of the crucible side heats the polysilicon raw material to form a melt, the seed crystal is inserted into the melt and undergoes the processes of seeding, shouldering, shoulder turning, equal diameter and finishing in sequence to obtain monocrystalline silicon rods. And the periphery of the heater is provided with a thermal insulation component to reduce heat loss. Usually, the thermal insulation component and its inner parts are collectively referred to as the thermal field.
[0003] The temperature control of the thermal field o...