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Dynamic stability performance evaluation method of power device

A power device, dynamic stabilization technology, applied in the field of dynamic stability performance evaluation of power devices

Inactive Publication Date: 2021-04-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For device applications, there is currently a lack of a real-time stability determination method

Method used

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  • Dynamic stability performance evaluation method of power device
  • Dynamic stability performance evaluation method of power device
  • Dynamic stability performance evaluation method of power device

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Embodiment Construction

[0032] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0033] The state space equations of power devices (such as SiC-MOS, Si-IGBT, etc.) actually represent a linear steady system, but the turn-on or turn-off process of the power device itself is a nonlinear time-varying system, because the system matrix has a random The parameters that change during the turn-on and turn-off of the device, taking SiC-MOS as an example, the state space equation system matrix includes the gate-drain capacitance C gd , Gate-to-source capacitance C gs and on-resistance R on Isotime-varying parameters, ie at a certain sample point of turn-on or turn-off, state-space equations are applicable. In order to correctly describe the nonlinearity and time-varying nature of the turn-on or turn-off ...

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Abstract

The invention relates to a dynamic stability performance evaluation method for a power device, which belongs to the technical field of power devices. Based on an equivalent circuit of the power device, sample data of the power device under different working conditions are obtained, a state-space equation of the power device is established according to the sample data, so that a system matrix is obtained, and the system matrix is substituted into a Lyapunov equation to solve a matrix used for judging stability; whether the matrix is positive definite or not is judged through the Sylvester criterion, so that whether the power device is stable or not under different working conditions is obtained, the instability index of the power device can be obtained by counting the number of instability points and the number of stability points, and therefore whether the power device is stable or not is judged. According to the method, the dynamic stability of the power device can be judged according to the parameters in real-time operation of the power device, the EMI risk level of the power device can be effectively evaluated, the actual application of the power device can be guided, reference is provided for design optimization of the power device, and the method has the advantages of being simple, efficient, portable and the like.

Description

technical field [0001] The invention belongs to the technical field of power devices, and in particular relates to a method for evaluating dynamic stability performance of power devices. Background technique [0002] Power devices, including insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), power metal oxide semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), thyristor (Thyristor), gate can be turned off Thyristors (gate turn-offthyristor, GTO), etc., as the core components of power electronics technology, are widely used in various power electronics topologies. With the improvement of power device design and manufacturing technology, the static power consumption of power devices that mainly work in switch mode has been continuously reduced, and the static performance has been greatly improved. At the same time, due to the increase in switching frequency, dynamic performance has gradually become the ma...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608G01R31/2617G01R31/2621G01R31/263
Inventor 曾潇李泽宏万佳利
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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