Semiconductor saturable absorption mirror capable of improving thermal damage resistance and manufacturing method thereof

Abstract

The invention discloses a semiconductor saturable absorber mirror capable of improving thermal damage resistance and a manufacturing method thereof. The semiconductor saturable absorber mirror comprises a metal bottom plate, wherein a semiconductor chilling plate is welded to the top of the metal bottom plate through welding flux, and a metal heat sink is welded to the semiconductor chilling plate through welding flux; a thermistor is adhered to the surface of the metal heat sink through solder; an SESAM chip is welded to one side of the metal heat sink through welding flux. According to the semiconductor saturable absorption mirror capable of improving the thermal damage resistance, the metal bottom plate, the semiconductor chilling plate, the metal heat sink, the thermistor and the SESAM chip are bonded by welding flux instead of the existing glue, so pollution to the SESAM caused by the use of the glue is avoided, and the service life of the SESAM is prolonged; and the absorption mirror has advantages of excellent heat dissipation performance, wide working temperature range, high reliability, good long-term stability, long service life and the like, and thermal damage resistance of the SESAM chip is greatly improved.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a semiconductor saturable absorption mirror capable of improving thermal damage resistance and a manufacturing method thereof. Background technique [0002] The basic structure of the Semiconductor Saturable Absorber Mirror (SESAM, Semiconductor SaturableAbsorberMirror) is to combine a reflector with a saturable absorber, and is often used as a cavity mirror in a laser cavity (see figure 1 shown). Generally, the bottom layer is a substrate made of GaAs material, on the substrate is an AlAs-AlGaAs Bragg total reflection mirror, a layer of saturable absorber thin film is grown on the Bragg total reflection mirror, and the top layer is a reflector made of a semiconductor material. mirror, or directly use the interface between semiconductor and air as a mirror, thus forming a Fabry-Perot cavity. [0003] As the core mode-locking element of ultrafast lasers, SESAM can be used to gene...

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Problems solved by technology

Since the above two methods involve the use of glue to fix the SESAM chip during the operation process, it is easy to cause surface contamination of the SESAM chip. At the same time, after the glue is cured, it is brittle, not resistant to shock and vibration, and has poor aging resistance, thus affecting the service life of the SESAM and Long-term stability of the laser

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