Inverter circuit of driver
An inverting circuit and driver technology, applied in the direction of logic circuit, logic circuit coupling device, logic circuit coupling/interface using field effect transistor, etc., can solve the problems of control signal delay, large circuit area, and affecting power conversion efficiency, etc. To achieve the effect of reducing parasitic capacitance
Pending Publication Date: 2021-04-27
UPI SEMICON CORP
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Problems solved by technology
In high-voltage applications, the drive circuit operates in a high-cross-voltage environment, and the components need to be fabricated using a high-voltage process, resulting in large circuit area and high production costs
On the other hand, as shown in FIG. 1 , the traditional high-voltage drive circuit includes a plurality of inverting circuits, and each inverting circuit includes a group of serially connected symmetrical high-voltage metal-oxide-semiconductor transistors. However, the above-mentioned symmetrical high-voltage metal-oxide-semiconductor transistors Large area and large parasitic capacitance between gate and source, resulting in control signal delay and affecting power conversion efficiency
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[0048] figure 2 is a schematic circuit diagram of the inverter circuit of the driver according to the first embodiment of the present invention. Such as figure 2 As shown, the inverter circuit 1 of the driver includes: a first switching element 11 , a second switching element 12 , a clamping circuit 13 and a capacitive element 14 . The clamping circuit 13 is connected in series between the first switching element 11 and the second switching element 12, and there is a first node 15 between the first switching element 11 and the clamping circuit 13, and a connection between the second switching element 11 and the clamping circuit 13 There is a second node 16 between them. The capacitive element 14 is coupled between the first node 15 and the second node 16 . In this embodiment, the first switch element 11 is a first type switch element (eg, PMOS), and the second switch element 12 is a second type switch element (eg, NMOS) different from the first type.
[0049] The inverte...
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The invention discloses an inverter circuit of a driver. The inverter circuit includes: a first switching element; a second switching element; a clamping circuit, connected between the first switching element and the second switching element in series, a first node being arranged between the first switching element and the clamping circuit, and a second node being arranged between the second switching element and the clamping circuit; and a capacitor element, coupled between the first node and the second node. The first switching element is a first type switching element, and the second switching element is a second type switching element.
Description
technical field [0001] The present invention relates to a driver, and in particular, the present invention relates to an inverter circuit of a driver. Background technique [0002] In the field of traditional switching power converters, a driving circuit generates a driving voltage to drive a power switch for power conversion. In high-voltage applications, the driving circuit operates in a high-voltage environment, and the components need to be manufactured using a high-voltage process, resulting in a large circuit area and high production costs. On the other hand, as shown in Figure 1, the traditional high-voltage driving circuit includes a plurality of inverting circuits, and each inverting circuit includes a group of serially connected symmetrical high-voltage metal-oxide-semiconductor transistors. However, the above-mentioned symmetrical high-voltage metal-oxygen-semiconductor Large area and large gate-source parasitic capacitance lead to control signal delay and affect...
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IPC IPC(8): H03K19/017H03K19/0185
CPCH03K19/017H03K19/017545H03K19/018557
Inventor 冯绍霖林其平
Owner UPI SEMICON CORP