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PNP-type high-voltage ESD device based on BCD process, and LDMOS

An ESD device, high-voltage technology, applied in the field of LDMOS, PNP type high-voltage ESD devices, can solve the problems of high on-resistance, high secondary breakdown voltage, low secondary breakdown current, etc., to improve performance and reduce volume Effect

Pending Publication Date: 2021-04-30
GTA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved in the present invention is in order to overcome the secondary breakdown current It2 of PNP type high-voltage ESD device in the existing semiconductor LDMOS manufacturing process based on BCD process lower, the on-resistance Ron is higher, and the secondary breakdown voltage Vt2 is lower. High and large device volume defects, provide a PNP type high voltage ESD device and LDMOS based on BCD process

Method used

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  • PNP-type high-voltage ESD device based on BCD process, and LDMOS
  • PNP-type high-voltage ESD device based on BCD process, and LDMOS
  • PNP-type high-voltage ESD device based on BCD process, and LDMOS

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Embodiment 1

[0035] Such as figure 1 As shown, this embodiment discloses a PNP-type high-voltage ESD device based on BCD technology, including a P substrate 1, a high-voltage N well 2, a P-type drift region 3, an N-type drift region 4, a first N well 5, a first Two N-wells 6 , N-type base 13 , P-type collector 11 , P-type emitter 12 , polysilicon gate 14 , gate oxide layer 15 , first STI8 , second STI7 , third STI9 and fourth STI10 . Among them, the PNP high-voltage ESD device is a PNP transistor; the working voltage range is 40-65V; the node range of the BCD process is 65-180nm.

[0036] Wherein, the first STI 8 is located between the P-type collector 11 and the P-type emitter 12 . The polysilicon gate 14 is located in the upper region of the two ends adjacent to the first STI 8 and the P-type emitter 12 . The gate oxide layer 15 is located between the polysilicon gate 14 and the second STI 8 and the P-type emitter 12 . The high-voltage N well 2 is located in the P substrate 1; the P-t...

Embodiment 2

[0042] This embodiment discloses an LDMOS, which is a high-voltage LDMOS, including the BCD-based PNP high-voltage ESD device disclosed in Embodiment 1. Among them, the PNP high-voltage ESD device based on the BCD process is used to realize the ESD protection of the high-voltage LDMOS. When the peak voltage caused by the instantaneous current exceeds its 40-65V working voltage but does not reach the secondary breakdown voltage, the LDMOS guides the current through the PNP high-voltage ESD device to achieve ESD protection. In this embodiment, by adjusting the structure of the PNP-type high-voltage ESD device, a higher secondary breakdown current It2, a lower on-resistance Ron and a lower The secondary breakdown voltage Vt2. The volume of the device can be reduced, and the performance of the device can be greatly improved.

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Abstract

The invention discloses a PNP-type high-voltage ESD device based on a BCD process, and an LDMOS. The PNP-type high-voltage ESD device comprises a P-type collector, a P-type emitter and a first STI located between the P-type collector and the P-type emitter, and the standard length of the first STI is expressed as L; the high-voltage ESD device with the first STI having the length of PNP further comprises a polysilicon gate, and the polysilicon gate is located in an upper region of two adjacent ends of the first STI and the P-type emitter. By adjusting the structure of the PNP-type high-voltage ESD device, high secondary breakdown current It2, low on-resistance Ron and low secondary breakdown voltage Vt2 are obtained on the premise that a photomask is not added in the LDMOS manufacturing process. According to the PNP-type high-voltage ESD device manufactured through the method, the secondary breakdown current It2 is increased by about one time, the on resistance Ron is reduced by about 2 / 3, meanwhile, the size of the device is reduced, and the performance of the device is greatly improved.

Description

technical field [0001] The present invention relates to ESD (Electro-Static discharge, electrostatic discharge) device, relate in particular to a kind of PNP type high voltage ESD device and LDMOS (Laterally- Diffused Metal-Oxide Semiconductor, Laterally Diffused Metal-Oxide Semiconductor). Background technique [0002] The ESD phenomenon is a serious problem for the normal operation of semiconductor devices, and ESD devices can be divided into the discharge current type based on the forward conduction and the discharge current type based on the negative resistance effect. For ESD devices, the secondary breakdown current It2, the on-resistance Ron, and the secondary breakdown voltage Vt2 are of great significance to the design of the device. Therefore, in the LDMOS manufacturing process, how to improve the current withstand capability of the ESD device, that is, the secondary breakdown current It2, the on-resistance Ron and the secondary breakdown voltage Vt2, without incre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092H01L27/02
CPCH01L27/092H01L27/0251H01L27/0296
Inventor 林威
Owner GTA SEMICON CO LTD
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