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Image sensor and photodetector

A technology of imaging elements and resistive elements, applied in electrical elements, instruments, image communication, etc., can solve problems such as the inability to fully reduce the power consumption of AD conversion units

Pending Publication Date: 2021-05-04
SONY SEMICON SOLUTIONS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, there is a problem that the power consumption of the AD conversion unit cannot be sufficiently reduced due to being rate-limited by the power supply voltage of the comparator

Method used

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  • Image sensor and photodetector

Examples

Experimental program
Comparison scheme
Effect test

Deformed example 1

[0185] The imaging element according to Modification 1 is characterized in that the differential input unit and the tail current source each include an NMOS transistor, and the current mirror unit includes a PMOS transistor.

[0186] Such as Figure 12 As shown, the comparator 131 according to this modification differs from the comparator 121 in that a differential amplifier 30 is provided instead of the differential amplifier 20 .

[0187] Such as Figure 12 As shown, the comparator 131 includes a differential input unit 31, and the differential input unit 31 includes a vertical signal line 110 connected to the vertical signal line 110 via the first capacitor unit 26 (in Figure 4 not shown, see figure 2) of the first input unit 311 and the second input unit 312 connected to the second capacitive unit 27 . In addition, the comparator 131 further includes a current mirror unit 32 including a transistor diode-connected via the first resistance element R221 . As will be exp...

Deformed example 2

[0206]The imaging element according to Modification 2 is characterized in that the configurations of the first capacitive unit and the second capacitive unit are different from those in the imaging element according to the above-described embodiments.

[0207] Such as Figure 13 As shown, the comparator 141 according to the present modification includes the differential amplifier 20 having the same configuration as the differential amplifier 20 provided in the comparator 121 according to the above-described embodiment. In addition, the comparator 141 also includes a switch unit 24 having the same configuration as the switch unit 24 provided in the comparator 121 . Meanwhile, the comparator 141 includes the first capacitive unit 26 and the second capacitive unit 27 having different configurations from the first capacitive unit 26 and the second capacitive unit 27 provided in the comparator 121 according to the above-described embodiment.

[0208] The first capacitive unit 26 i...

Deformed example 3

[0214] The imaging element according to Modification 3 is characterized in that the configurations of the first capacitive unit and the second capacitive unit are different from those of the imaging element according to Modification 1 described above.

[0215] Such as Figure 14 As shown, the comparator 161 according to the present modification includes the differential amplifier 30 having the same configuration as the differential amplifier 30 provided in the comparator 131 according to the modification 1 described above. In addition, the comparator 161 also includes a switch unit 24 having the same configuration as the switch unit 24 provided in the comparator 131 . Meanwhile, the comparator 161 includes the first capacitive unit 26 and the second capacitive unit 27 having different configurations from the first capacitive unit 26 and the second capacitive unit 27 provided in the comparator 131 according to Modification 1 described above. The comparator 161 includes the fir...

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PUM

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Abstract

An objective of the present technique is to provide an image sensor and a photodetector that are capable of reducing power consumption of an A / D conversion unit. An image sensor is provided with a comparator comprising: a differential input section that has a first input section connected to a first capacitance section, and a second input section connected to a second capacitance section; a current mirror section that has a first resistance element connected to the differential input section, and NMOS transistors diode-connected via the first resistance element; a second resistance element connected to the differential input section; and switch sections one of which is provided between the first input section and a junction between the first resistance element and the NMOS transistors and the other of which is provided between the second input section and a junction between the second resistance element and the current mirror section.

Description

technical field [0001] This technology relates to imaging elements and photodetectors. Background technique [0002] Generally, there is known a solid-state imaging device including a pixel unit including a plurality of pixels arranged in a matrix (for example, see Patent Document 1). The solid-state imaging device includes an AD conversion unit that performs analog-to-digital (AD: Analog-to-Digital) conversion on an analog pixel signal based on an electrical signal photoelectrically converted by a photoelectric conversion element provided in a plurality of pixels. Based on the digital pixel signals AD-converted by the AD conversion unit, an image is displayed on a display device or the like. [0003] reference list [0004] patent documents [0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-023065 Contents of the invention [0006] technical problem [0007] Use a comparator for the AD conversion unit. A comparator includes a current source, ...

Claims

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Application Information

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IPC IPC(8): H04N5/378H01L31/10H03K5/08H03M1/56
CPCH03K5/08H03M1/56H01L31/10H03K5/22H04N25/75H01L27/14612H04N25/709
Inventor 马上崇
Owner SONY SEMICON SOLUTIONS CORP
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