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MEMS sensor and manufacturing method thereof

A manufacturing method and sensor technology, applied to instruments, electric solid-state devices, semiconductor devices, etc., can solve problems such as device failure and device sensitivity reduction

Pending Publication Date: 2021-05-07
HANGZHOU HIKMICRO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the air pressure inside the cavity rises to the point where the vacuum degree exceeds the set standard, the sensitivity of the device will drop below the standard value, causing the device to fail

Method used

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  • MEMS sensor and manufacturing method thereof
  • MEMS sensor and manufacturing method thereof
  • MEMS sensor and manufacturing method thereof

Examples

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Embodiment Construction

[0052] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0053] figure 1 is a schematic cross-sectional structure diagram of the MEMS sensor of the first embodiment of the present invention. figure 2 is a schematic top view of the substrate with the first welding ring removed; image 3 It is a bottom-view structure schematic diagram with the cover plate of the second welding ring removed.

[0054] refer to Figure 1 to Figure 3 As shown, the MEMS sensor 1 of the first embodiment includes:

[0055] The substrate 11 includes a MEMS structure 110, a first welding zone 111 arranged around the MEMS structure 110, and a first welding ring 112 located at the first welding zone 111;

[0056] The cover plate 12 includes a second welding area 121 and a second welding ring 122 located at the second we...

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PUM

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Abstract

The invention provides an MEMS sensor and a manufacturing method thereof. The MEMS sensor comprises a substrate and a cover plate, the substrate comprises an MEMS structure, a first welding area arranged around the MEMS structure, and a first welding ring located in the first welding area; the cover plate comprises a second welding area and a second welding ring located in the second welding area. The substrate and the cover plate are welded together through the first welding ring and the second welding ring to form a sealing structure, so that the MEMS structure is limited in the vacuum cavity; at least one of the first welding area and the second welding area is provided with an annular groove or an annular protrusion distributed in the circumferential direction, a first welding ring is located on the first welding area in a shape-shaped mode, and a second welding ring is located on the second welding area in a shape-shaped mode. According to the embodiment of the invention, the leakage rate of gas can be reduced, the reliability of the MEMS sensor is improved, and the service life of the MEMS sensor is prolonged.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a MEMS sensor and a manufacturing method thereof. Background technique [0002] Hermetic packaging is a common form of packaging requirements in the MEMS field. MEMS devices such as acceleration sensors, pressure sensors, and angular velocity sensors have movable parts inside, and it is necessary to provide airtight cavities for the movable parts to ensure that the movable parts have small damping and static friction inside the cavity. MEMS devices, such as uncooled infrared focal plane detectors, have microbolometers inside, and it is necessary to reduce the vacuum inside the device to ensure small thermal radiation heat loss. When the air pressure inside the cavity rises to the point where the vacuum degree exceeds the set standard, the sensitivity of the device will drop below the standard value, causing the device to fail. Therefore, hermetic sealing is a key ...

Claims

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Application Information

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IPC IPC(8): B81B7/00B81B7/02B81C1/00
CPCB81B7/0032B81B7/0035B81B7/02B81C1/00261B81C1/00269B81C1/00277
Inventor 宋亚伟迟海宋学谦
Owner HANGZHOU HIKMICRO SENSING TECH CO LTD
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