Method for detecting graphic precision of laser-doped SE battery

A technology of laser doping and precision, which is applied in the test/measurement of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of inability to accurately identify the degree of doping deviation of laser lines, and inability to accurately reflect the distribution of laser lines.

Active Publication Date: 2021-05-07
JA SOLAR
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Problems solved by technology

[0004] In related technologies, the existing detection method can be used as a monitor for major abnormalities in laser doping, but it...

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  • Method for detecting graphic precision of laser-doped SE battery
  • Method for detecting graphic precision of laser-doped SE battery
  • Method for detecting graphic precision of laser-doped SE battery

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Embodiment Construction

[0042] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with this application. Rather, they are merely examples of approaches consistent with aspects of the application as recited in the appended claims.

[0043] figure 1 It is a flow chart of a method for detecting pattern accuracy of a laser-doped SE battery according to an exemplary embodiment. The method may include the steps of:

[0044] Step S1, respectively measure the laser line PT value, laser line spacing value, edge distance offset value, diagonal line difference, laser line offset value on one side, and laser line midline offset value of the batt...

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Abstract

The invention relates to a method for detecting the graphic precision of a laser-doped SE battery. The method comprises the following steps of: S1, respectively measuring the PT value of laser rays, the spacing value of the laser rays, an edge distance offset value, a diagonal difference value, a single-side offset value of each laser rays and the center line offset value of each laser ray of a to-be-detected battery piece; and S2, respectively judging whether the six parameters measured in the previous step meet respective corresponding precision requirements or not, the precision requirements being determined according to the design size of the pattern of the SE battery. According to the method provided by the technical schemes of the invention, distribution of all the laser rays can be accurately reflected by detecting the single-side deviation values of the laser rays and the center line deviation values of the laser rays, silicon wafers with abnormal SE battery patterns are found in time before a printing process, the situation that batch overprinting is poor during printing alignment due to the fact that silicon wafers with insufficient precision enter the printing process is prevented, and the production of screen printing graph and SE graph overprinting defective products is effectively avoided, and the economic benefits are improved.

Description

technical field [0001] This application relates to the technical field of SE (Selective Emitter, Selective Emitter) crystalline silicon cell production and manufacturing, in particular to a method for detecting the pattern accuracy of laser-doped SE cells. Background technique [0002] The SE structure is characterized by shallow diffusion in the region receiving light to form a low-doped region, while a highly doped region is formed under the metal electrode. The recombination of the few electrons on the surface of the emitter of this structure is reduced, and there is a gap between the metal electrode and the emitter. It can form a good ohmic contact, so as to obtain higher short-circuit current, open-circuit voltage and fill factor, and improve the conversion efficiency of solar cells. [0003] Laser doping is an effective way to prepare SE batteries. Laser has the advantages of energy concentration and non-contact, and has the characteristics of selective melting and dif...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L31/18
CPCH01L22/12H01L22/20H01L31/18Y02P70/50
Inventor 王贵梅王玉肖张建军
Owner JA SOLAR
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