Packaging structure and packaging method of gallium nitride HEMT

Abstract

The invention discloses a packaging structure and a packaging method of a gallium nitride HEMT, a grid electrode of a gallium nitride HEMT chip to be packaged is located between a source electrode and a drain electrode, a second conductive bonding pad, a third conductive bonding pad and a base plate pin area are arranged and located on one side, close to the source electrode, of the chip, and a first conductive bonding pad is located on the other side, close to the drain electrode, of the chip; the first electric connection part is electrically connected with the drain electrode and the first conductive pad, the second electric connection part is electrically connected with the source electrode and the base plate pin area, the fourth electric connection part is electrically connected with the source electrode and the second conductive pad, and the third electric connection part is electrically connected with the grid electrode and the third conductive pad, so the voltage-withstanding distance between the electrodes of the chip can be met; the fourth electric connection part is electrically connected with the source electrode and the second conductive bonding pad to form a Kelvin source electrode so as to reduce the parasitic inductance of the driving loop; the gallium nitride HEMT chip to be packaged is fixed and electrically connected to the heat dissipation area, so the heat dissipation performance of the packaging structure is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor chip packaging, and more specifically, to a packaging structure and packaging method of GaN HEMT (High Electron Mobility Transistor). Background technique [0002] As a typical representative of the third-generation semiconductor materials, gallium nitride (GaN), a wide-bandgap semiconductor, has many excellent properties that silicon materials do not have. It is an excellent semiconductor material for high-frequency, high-voltage and high-power applications. Broad application prospects. [0003] Although gallium nitride, a wide bandgap semiconductor material, has great advantages over silicon materials, the current traditional power device packaging technology is based on the design of traditional silicon material power devices. When a semiconductor device made of GaN is packaged, it will affect the performance of the semiconductor device. Contents of the invention [0004] In v...

AI Technical Summary

Problems solved by technology

[0003] Although gallium nitride, a wide bandgap semiconductor material, has great advantages over silicon materials, the current traditional power device packaging technology is based on the design of traditional silicon material power devices. When a semiconductor device made of gallium chloride is packaged, it will affect the performance of the semiconductor device

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