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RGBW-based Micro-LED photoetching process

A photolithography process and photoresist technology, which is applied to the photolithography process of the pattern surface, micro-lithography exposure equipment, photo-plate process exposure device, etc., can solve the problem of different thicknesses of sealants and uneven brightness of sub-pixels, etc. question

Inactive Publication Date: 2021-05-11
FUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention proposes a Micro-LED photolithography process based on RGBW, which can solve the problem of uneven luminance of sub-pixels due to different thicknesses of sealing glue for quantum dots

Method used

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  • RGBW-based Micro-LED photoetching process
  • RGBW-based Micro-LED photoetching process
  • RGBW-based Micro-LED photoetching process

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Embodiment Construction

[0041]The present invention discloses RGBW-based micro-LED photolithography processes, and those skilled in the art can learn from the content, appropriate improvement of technical details. It is particularly important to note that all similar replacement and modifications will be apparent to those skilled in the art, which are considered to be included in the present invention. The method and application of the present invention have been described by a preferred embodiment, and the relevant personnel can be achieved without departing from the methods and applications described herein without departing from the spirit and apparatus of the present invention. Application techniques are applied.

[0042]In a micro-LED display technology, the quantum points corresponding to different color sub-pixels produce the energy of light absorption of the same brightness, which results in a different body-type quantum dot colloid with different color sub-pixels.

[0043]However, in the conventional te...

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Abstract

The invention provides an RGBW-based Micro-LED photoetching process. The RGBW-based Micro-LED photoetching process comprises the following steps: S101, coating the light receiving surface of an array substrate with a photoresist; S102, adjusting a mask plate to make the projection of the center of each light-transmitting area on the mask plate on the array substrate is located at the center of the display pixel corresponding to the light-transmitting area, wherein the distance between the mask plate and the array substrate is a first distance; S103, exposing the photoresist by using four groups of light sources through the light-transmitting area of the mask, wherein each group of light sources corresponds to one group of sub-pixel structures with the same color, and the illumination intensity and the illumination time of each group of light sources and the illumination received by the photoresist parts corresponding to the sub-pixel structures with different colors are different; S104, dissolving the photoresist on the array substrate; and S105, drying the array substrate, and etching the sub-pixels to form liquid storage tanks with different depths. The problem of unbalanced sub-pixel luminance caused by different sealing glue thicknesses of quantum dots can be solved.

Description

Technical field[0001]The present invention relates to the field of displays, in particular, an RGBW-based micro-LED photolithography process.Background technique[0002]Micro-LEDs are a new generation of display technology, which is more bright than existing OLED (organic light emitting diodes), and the luminous efficiency is better, but the power consumption is lower. Micro-LED technology, the LED structure is designed to film, minimally, and array, with a size of only 1 to 10 μm. The maximum advantage of Micro-LEDs comes from the spacing of micron grades, and each pixel can address control and single-point drive luminescence, long life, and wide application.[0003]The RGBW display is relatively reduced (R), green (g), blue (b) sub-pixel, and white pixel, the addition of white pixels can greatly improve the LCD The light-emitting efficiency of the perimeter area of ​​the OLED display unit can achieve low power, energy saving and environmental protection.[0004]Quantum dots QDS is a sem...

Claims

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Application Information

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IPC IPC(8): G03F7/20G09F9/33G09F9/302H01L27/15H01L33/00
CPCG03F7/20G03F7/7005G03F7/70091G03F7/70425G09F9/302G09F9/33H01L27/156H01L33/0095
Inventor 周雄图叶金宇张永爱吴朝兴林坚普林志贤郭太良
Owner FUZHOU UNIV
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