Laser processing device and phase pattern adjusting method

A laser processing and phase technology, applied in auxiliary devices, positioning devices, metal processing, etc., can solve problems such as inability to fully compensate for differences in laser beam performance

Pending Publication Date: 2021-05-18
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, in the technique disclosed in Patent Document 3, since the measurement is not performed with a condenser lens, it may be different from the actual processing point, and it may not be possible to fully compensate for the performance difference of the laser beam irradiated to the workpiece between devices.

Method used

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  • Laser processing device and phase pattern adjusting method
  • Laser processing device and phase pattern adjusting method
  • Laser processing device and phase pattern adjusting method

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no. 1 Embodiment approach 〕

[0034] A laser processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings. First, the configuration of the laser processing apparatus 1 will be described. figure 1 It is a perspective view which shows the structural example of the laser processing apparatus of 1st Embodiment. of the first embodiment figure 1 The illustrated laser processing apparatus 1 is an apparatus that irradiates a workpiece 200 with a pulsed laser beam 21 to perform laser processing on the workpiece 200 .

[0035] as figure 1 The workpiece 200 to be processed by the illustrated laser processing apparatus 1 is a wafer such as a disc-shaped semiconductor wafer or an optical device wafer having a substrate 201 of silicon, sapphire, gallium arsenide, or the like. Such as figure 1 As shown, the workpiece 200 has planned dividing lines 203 set in a grid pattern on the front surface 202 of a substrate 201 and devices 204 formed in regions di...

no. 2 Embodiment approach 〕

[0095] A laser processing device and a phase pattern adjustment method according to a second embodiment of the present invention will be described with reference to the drawings. Figure 10 It is a perspective view which shows the structural example of the laser processing apparatus of 2nd Embodiment. Figure 11 It is a flowchart explaining the phase pattern adjustment method of the second embodiment. In addition, in Figure 10 and Figure 11 In the description, the same reference numerals are assigned to the same parts as those in the first embodiment, and description thereof will be omitted.

[0096] In the laser processing apparatus 1-2 of the second embodiment, as Figure 10 As shown, the control unit 100 has a changing unit 104 and a judging unit 105. Except that the changing unit 104, that is, the control unit 100 performs the Zernike coefficient adjustment step ST4, and the judging unit 105, that is, the control unit 100 performs step ST5, other parts are the same as...

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Abstract

The invention provides a laser processing device and a phase pattern adjusting method which can suppress the performance difference of laser beams irradiated to a processed object between processing devices, thereby obtaining a desired processing result. The laser processing device includes a laser beam irradiation unit that irradiates a laser beam to a workpiece, and a control unit. The laser beam irradiation unit includes a laser oscillator that oscillates laser light; a condenser lens; a concave mirror having a focal point at the condensing point of the condensing lens and having a spherical reflecting surface; a beam splitter for passing the laser beam emitted from the laser oscillator through the condenser lens and branching the reflected light; and a wavefront measuring means that receives the reflected light and acquires the wavefront data of the laser beam, and the control unit changes the phase pattern displayed on the display section of the spatial light modulator on the basis of the wavefront data.

Description

technical field [0001] The present invention relates to a laser processing device and a phase pattern adjustment method. Background technique [0002] In order to divide a plate-shaped object such as a semiconductor wafer into chip sizes, a laser processing method is known in which a laser beam is irradiated to a planned dividing line of the plate-shaped object to form a modified layer as a starting point of division (for example, refer to Patent Document 1). [0003] However, in the optical system of a laser processing device that performs laser processing as described above, since various optical components are used, various optical distortions occur in the optical path from the laser oscillator to the condenser lens, and sometimes there is a gap between the processing devices. Processing results will vary. [0004] Therefore, a technique has been proposed in which the concave mirror is held by a chuck table, and the light reflected from the concave mirror is photographed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/064B23K26/70B23K26/364B23K37/04H01L21/67H01L21/78
CPCB23K26/0648B23K26/0643B23K26/064B23K26/702B23K26/364B23K37/0408H01L21/67092H01L21/78B23K26/032B23K26/04B23K26/705B23K26/707B23K26/062B23K26/352B23K26/03B23Q3/06B23K2101/40B23K26/0665
Inventor 野村哲平植木笃
Owner DISCO CORP
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