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Preparation method of high-reflection anti-laser film layer on surface of silicon nitride ceramic substrate

A silicon nitride ceramic, substrate surface technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of structural damage, large heat, high laser absorption rate

Active Publication Date: 2021-05-18
HARBIN INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the existing silicon nitride material has a high laser absorption rate, which will generate a large amount of heat and cause structural damage, and provides a method for preparing a high-reflection anti-laser film layer on the surface of a silicon nitride ceramic substrate

Method used

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  • Preparation method of high-reflection anti-laser film layer on surface of silicon nitride ceramic substrate
  • Preparation method of high-reflection anti-laser film layer on surface of silicon nitride ceramic substrate
  • Preparation method of high-reflection anti-laser film layer on surface of silicon nitride ceramic substrate

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specific Embodiment approach 1

[0021] Specific embodiment one: present embodiment a kind of preparation method of silicon nitride ceramic substrate surface high reflection anti-laser film layer, it is finished according to the following steps:

[0022] 1. Surface pretreatment of silicon nitride ceramics:

[0023] Cleaning and drying the silicon nitride ceramics to obtain pretreated silicon nitride ceramics;

[0024] 2. Preparation of titanium oxide nano-slurry:

[0025] Mix nano-titanium dioxide, acrylic resin and acetone, and stir magnetically for 1h-2h under the condition of rotating speed of 500r / min-1000r / min to obtain the slurry. Under the condition of power of 500W-1000W, the slurry is ultrasonically Oscillate for 1h to 2h, then place the oscillated slurry in a cell disruptor, and under the condition of the probe power of 1000W to 1200W, ultrasonically oscillate the probe for 3min to 5min to obtain titanium oxide nano-slurry;

[0026] The mass ratio of the nano-titanium dioxide to the acrylic resin ...

specific Embodiment approach 2

[0033] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the cleaning described in step 1 is performed under the condition of ultrasonic power of 500W-1000W, placed in acetone for ultrasonic cleaning for 1h-2h, and then Under the condition of 500W-1000W, place it in alcohol for ultrasonic cleaning for 1h-2h, and finally, under the condition of ultrasonic power of 500W-1000W, place it in deionized water for ultrasonic cleaning for 1h-2h. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0034] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the drying described in step 1 is vacuum drying in a vacuum oven for 2 hours at a temperature of 60° C. to 100° C. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a preparation method of a high-reflection anti-laser film layer, in particular to a preparation method of a high-reflection anti-laser film layer on the surface of a silicon nitride ceramic base material. The invention aims to solve the problem that the existing silicon nitride material has high laser absorptivity, can generate a large amount of heat and causes structural damage. The preparation method comprises the following steps: 1, silicon nitride ceramic surface pretreatment; 2, titanium oxide nano slurry preparation; and 3, titanium oxide coating preparation. The method is used for preparing the high-reflection anti-laser film layer on the surface of the silicon nitride ceramic base material.

Description

technical field [0001] The invention relates to a preparation method of a high-reflection anti-laser film layer. Background technique [0002] With the development of aerospace technology, wave-transparent materials are required to have good and stable wave-transmitting performance in a wider frequency band, better thermal shock resistance and better weather resistance. Research. Among them, silicon nitride ceramic material has strong covalent bond force and low thermal expansion coefficient (2.35×10 -6 / K), high oxidation resistance and other advantages have become research hotspots. In recent years, with the successful development of high-power lasers, laser weapons have developed rapidly. Laser weapons can cause thermal, mechanical and radiation damage to materials. Ordinary silicon nitride materials have a high absorption rate for laser light, which will generate a lot of heat and cause structural damage. Contents of the invention [0003] The invention aims to so...

Claims

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Application Information

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IPC IPC(8): C04B41/87
CPCC04B41/5041C04B41/87C04B41/009C04B35/584C04B41/4543Y02P70/50
Inventor 朱嘉琦汪新智程珙宋志超刘颖白一杰杨磊胡梦玥任建华
Owner HARBIN INST OF TECH