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A kind of preparation method of high reflection anti-laser film layer on the surface of silicon nitride ceramic substrate

A silicon nitride ceramic and substrate surface technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of high laser absorption rate, high heat, structural damage, etc., and achieve enhanced reflection The effect of high efficiency, guaranteed dispersion and stable performance

Active Publication Date: 2022-07-08
HARBIN INST OF TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the problem that the existing silicon nitride material has a high laser absorption rate, which will generate a large amount of heat and cause structural damage, and provides a method for preparing a high-reflection anti-laser film layer on the surface of a silicon nitride ceramic substrate

Method used

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  • A kind of preparation method of high reflection anti-laser film layer on the surface of silicon nitride ceramic substrate
  • A kind of preparation method of high reflection anti-laser film layer on the surface of silicon nitride ceramic substrate
  • A kind of preparation method of high reflection anti-laser film layer on the surface of silicon nitride ceramic substrate

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specific Embodiment approach 1

[0021] Specific embodiment 1: This embodiment is a preparation method of a high-reflection anti-laser film layer on the surface of a silicon nitride ceramic substrate, which is completed according to the following steps:

[0022] 1. Surface pretreatment of silicon nitride ceramics:

[0023] cleaning and drying the silicon nitride ceramics to obtain pretreated silicon nitride ceramics;

[0024] 2. Preparation of titanium oxide nano-slurry:

[0025] Mix nano-titanium dioxide, acrylic resin and acetone, magnetically stir for 1h-2h under the condition of rotating speed of 500r / min~1000r / min to obtain slurry, under the condition of power of 500W~1000W, pass the slurry through water bath ultrasonic Oscillate for 1h to 2h, then place the oscillated slurry in a cell disruptor, and under the condition of probe power of 1000W to 1200W, ultrasonically oscillate the probe for 3min to 5min to obtain titanium oxide nano-slurry;

[0026] The mass ratio of the nanometer titanium dioxide to ...

specific Embodiment approach 2

[0033] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the cleaning described in step 1 is placed in acetone for ultrasonic cleaning for 1h to 2h under the condition of ultrasonic power of 500W to 1000W, and then cleaned in ultrasonic power for 1h to 2h. Under the condition of 500W~1000W, it is placed in alcohol for ultrasonic cleaning for 1h~2h, and finally, under the condition of ultrasonic power of 500W~1000W, it is placed in deionized water for ultrasonic cleaning for 1h~2h. Others are the same as the first embodiment.

specific Embodiment approach 3

[0034] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the drying described in step 1 is vacuum drying in a vacuum drying oven for 2 hours at a temperature of 60°C to 100°C. Others are the same as in the first or second embodiment.

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Abstract

A preparation method of a high-reflection anti-laser film layer on the surface of a silicon nitride ceramic substrate relates to a preparation method of a high-reflection anti-laser film layer. The present invention solves the problem that the existing silicon nitride material has a high absorption rate of laser light, which will generate a large amount of heat and cause structural damage. Preparation method: 1. pretreatment of silicon nitride ceramic surface; 2. preparation of titanium oxide nano-slurry; 3. production of titanium oxide coating. The invention is used for the preparation of the high-reflection anti-laser film layer on the surface of the silicon nitride ceramic substrate.

Description

technical field [0001] The invention relates to a preparation method of a high-reflection anti-laser film layer. Background technique [0002] With the development of aerospace technology, wave-transmitting materials are required to have good and stable wave-transmitting properties in a wider frequency band, better thermal shock resistance and better weather resistance. Research. Among them, the silicon nitride ceramic material has strong covalent bonding force and low thermal expansion coefficient (2.35×10 -6 / K), the advantage of high anti-oxidation temperature has become a research hotspot. In recent years, with the successful development of high-power lasers, laser weapons have developed rapidly. Laser weapons can cause thermal, mechanical, and radiation damage to materials. Ordinary silicon nitride materials have a high absorption rate for laser light, which will generate a lot of heat and cause structural damage. SUMMARY OF THE INVENTION [0003] The present inv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/87
CPCC04B41/5041C04B41/87C04B41/009C04B35/584C04B41/4543Y02P70/50
Inventor 朱嘉琦汪新智程珙宋志超刘颖白一杰杨磊胡梦玥任建华
Owner HARBIN INST OF TECH