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Manufacturing process for improving appearance and pressing condition of gold bump

A manufacturing process and bump technology, which is applied in the field of manufacturing processes for improving the appearance and pressing state of gold bumps, can solve the problems of affecting the surface flatness of gold bumps, low height of aluminum pads, and increased rate of unqualified products.

Pending Publication Date: 2021-05-18
合肥新汇成微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the current wafer manufacturing process, when the wafer is supplied, there is a certain height difference between the aluminum pad and the protective layer. After the subsequent electroplating bump and etching process, the final gold bump has a low height at the aluminum pad. The high height of the protective layer affects the surface planarity of the gold bump
The uneven surface of the gold bump leads to poor lamination between the substrate and the gold bump when it is fixed with the substrate through conductive glue, which increases the difficulty of the lamination process and leads to an increase in the rate of unqualified products; The ACF particle content requirement of the conductive adhesive increases, which increases the purchase cost of the conductive adhesive

Method used

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  • Manufacturing process for improving appearance and pressing condition of gold bump
  • Manufacturing process for improving appearance and pressing condition of gold bump
  • Manufacturing process for improving appearance and pressing condition of gold bump

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Such as Figure 1-6 , the manufacturing process for improving the appearance and pressing condition of gold bumps in this embodiment includes the following steps:

[0041] The first step, sputtering: the surface of the incoming wafer is sputtered with a composite metal film, the composite metal film includes a lower layer of titanium-tungsten film and an upper layer of gold film; the surface of the incoming wafer is provided with several Aluminum pads, the surface of the wafer is also provided with a number of protective layers covering each aluminum pad. The material of the protective layer is silicon nitride, silicon oxide or silicon oxynitride. There is an exposed groove corresponding to each aluminum pad on the protective layer. The exposed grooves are set in one-to-one correspondence with each aluminum pad, and each aluminum pad exposes part of the surface through the corresponding exposed groove;

[0042] The second step, photoresist coating: a first photoresist ...

Embodiment 2

[0058] Such as Figure 1-6 , the manufacturing process for improving the appearance and pressing condition of gold bumps in this embodiment includes the following steps:

[0059] The first step, sputtering: the surface of the incoming wafer is sputtered with a composite metal film, the composite metal film includes a lower layer of titanium-tungsten film and an upper layer of gold film; the surface of the incoming wafer is provided with several Aluminum pads, the surface of the wafer is also provided with a number of protective layers covering each aluminum pad. The material of the protective layer is silicon nitride, silicon oxide or silicon oxynitride. There is an exposed groove corresponding to each aluminum pad on the protective layer. The exposed grooves are set in one-to-one correspondence with each aluminum pad, and each aluminum pad exposes part of the surface through the corresponding exposed groove;

[0060] The second step, photoresist coating: the first photoresis...

Embodiment 3

[0076] Such as Figure 1-6 , the manufacturing process for improving the appearance and pressing condition of gold bumps in this embodiment includes the following steps:

[0077] The first step, sputtering: the surface of the incoming wafer is sputtered with a composite metal film, the composite metal film includes a lower layer of titanium-tungsten film and an upper layer of gold film; the surface of the incoming wafer is provided with several Aluminum pads, the surface of the wafer is also provided with a number of protective layers covering each aluminum pad. The material of the protective layer is silicon nitride, silicon oxide or silicon oxynitride. There is an exposed groove corresponding to each aluminum pad on the protective layer. The exposed grooves are set in one-to-one correspondence with each aluminum pad, and each aluminum pad exposes part of the surface through the corresponding exposed groove;

[0078] The second step, photoresist coating: the first photoresis...

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Abstract

The invention discloses a manufacturing process for improving the appearance and pressing condition of a gold bump in the field of semiconductor manufacturing. The manufacturing process comprises the following steps of sputtering, photoresist coating, exposure, developing, gold electroplating, photoresist removal, plasma treatment, gold etching, gold bump treatment, titanium tungsten etching and toughening. The gold bump treatment is subdivided into the following processes of secondary photoresist coating, secondary plasma treatment, secondary gold etching and secondary photoresist removal. According to the method, the technological processes of photoresist coating, plasma, gold etching and photoresist removal are added after gold etching, so that the surface height difference of the bumps is reduced or eliminated, the surface smoothness of the gold bumps is improved, and the pressing effect of subsequent packaging is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a manufacturing process for improving the appearance and pressing condition of gold bumps. Background technique [0002] In the prior art, after the production of integrated circuits, such as liquid crystal panel driver chips, radio frequency chips, and memory chips, it is generally necessary to connect them to other components such as printed circuit boards or substrates through bump conductive structures, and then perform signal transmission. . At present, in the field of liquid crystal panel packaging, the main packaging methods are COF film-on-chip packaging (Chip On Film), COG glass-on-chip packaging (Chip On Glass) and COP flexible panel chip-on-chip packaging (Chip On PI). These different packaging methods rely on bumps to connect the driver chip to the circuit on the substrate. Among them, the COG chip-on-glass package mainly uses conductive adhesive (containin...

Claims

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Application Information

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IPC IPC(8): H01L21/60
CPCH01L24/11H01L2224/11H01L2224/118
Inventor 李文浩陆张潇王冬冬张伟许原诚
Owner 合肥新汇成微电子股份有限公司