Method for forming a common electrode for a plurality of optoelectronic devices

Abstract

A method for forming a common electrode 190 is provided, the method including: a) providing a support substrate 111 on which rest optoelectronic devices separated by trenches 170; b) forming a dielectric layer 130 on front faces, flanks, and a bottom of the trenches, of a thickness E1 and a thickness E2, which is less than the thickness E1, at, respectively, the front faces and the flanks; c) etching a thickness E3 of the dielectric layer 130, so as to uncover the flanks at a first section 170a of the trenches; d) forming a metal layer filling the trenches and covering the front faces; and e) performing a mechanochemical polishing of the metal layer, the polishing stopping on a portion of the dielectric layer 130, the metal layer remaining in the trenches 170 forming the common electrode 190.

Description

technical field [0001] The invention relates to the fields of microelectronics and optoelectronics. In particular, the invention relates to a method of forming electrical contacts on the sides of a device, more particularly a light emitting diode, placed on a main surface of a support substrate. [0002] In particular, the invention is implemented especially for ease of manufacture and increased control of the electrodes on the sides of LEDs with very high aspect ratios. Background technique [0003] Light-emitting display devices known in the prior art generally include light-emitting diode (LED) components, especially gallium nitride-based light-emitting diode (LED) components. [0004] The LED includes from the front to the back: an N-doped semiconductor layer, a light-emitting layer component, and a P-doped semiconductor layer, and the LED is placed on a supporting substrate provided with a control circuit through the back of the LED, and the control circuit is designed...

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Problems solved by technology

[0028] However, the above method is not satisfactory

[0029] In fact, at the end of the step of forming the trenches, the thickness of the hard mask pattern 120 is not well controlled and is not uniform from one pattern to another.

[0030] The consequence of this non-uniformity is that there is a significant variation between the first part of one trench and the first part of the other, so it is difficult to precisely control the contact between the common electrode and the N-doped semiconductor layer of each LED the extent of the area

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