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High-throughput microwave plasma reaction cavity

A technology of microwave plasma and reaction chamber, applied in the field of plasma, can solve the problem of low processable gas volume, achieve the effect of increasing volume, improving gas volume and stability, and improving processable gas volume

Active Publication Date: 2021-05-28
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a microwave plasma reaction chamber with a large processing capacity, so as to solve the problem that the current chamber has a low processable gas volume

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention. It can be understood that the drawings are provided for reference and description only, and are not intended to limit the present invention. The connection relationship shown in the drawings is only for the convenience of clear description, and does not limit the connection mode.

[0022] It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component, or there may be intervening ...

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Abstract

The invention discloses a high-throughput microwave plasma reaction chamber, and belongs to the technical field of plasma. The high-throughput microwave plasma reaction chamber comprises an upper cylindrical coupling chamber, a lower cylindrical coupling chamber, a waveguide and a quartz tube, wherein the upper cylindrical coupling cavity is fixedly communicated with the upper end of the lower cylindrical coupling cavity, the waveguide is fixedly communicated with the side wall of the lower cylindrical coupling cavity, the quartz tube vertically penetrates through the upper cylindrical coupling cavity and the lower cylindrical coupling cavity, an inlet joint corresponding to the quartz tube is fixed at the lower end of the lower cylindrical coupling cavity, and the inlet joint is provided with an ignition device inlet and an air inlet hole which are communicated with the quartz tube. According to the invention, the upper cylindrical coupling cavity is longitudinally added while plasma is gathered in the center of the cylinder, so that the plasma acting distance is lengthened, the microwave acting volume is increased, the treatable gas amount is greatly increased, the gas amount and stability of plasma working are improved, and the microwave energy utilization rate is increased.

Description

technical field [0001] The invention belongs to the field of plasma technology, and in particular relates to a microwave plasma reaction chamber with a large processing capacity. Background technique [0002] The cause of plasma generation is generally considered to be random thermal motion, and temperature and external electromagnetic field are the two main factors causing this random motion. The plasma generated by temperature changes is similar to the flame in a candle, and has a low degree of ionization; the plasma generated and maintained by an external electromagnetic field has a changeable structure and strong practicability, and is the main component of artificial plasma. [0003] When the frequency of the external electromagnetic field that excites the plasma reaches the microwave band, the plasma is called microwave plasma. Compared with DC, AC and RF plasmas, microwave plasmas do not require electrodes, have higher electron density, electron temperature and gas t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32229H01J37/32458
Inventor 朱铧丞杨阳
Owner SICHUAN UNIV