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Manufacturing method of central processing unit, central processing unit and control method thereof

A technology of central processing unit and manufacturing method, which is applied to the architecture with a single central processing unit, electrical digital data processing, instruments, etc., and can solve problems such as poor CPU performance

Active Publication Date: 2021-06-01
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, limited by the capacity and volume of SRAM, the performance of CPU is not good

Method used

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  • Manufacturing method of central processing unit, central processing unit and control method thereof
  • Manufacturing method of central processing unit, central processing unit and control method thereof
  • Manufacturing method of central processing unit, central processing unit and control method thereof

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Embodiment Construction

[0050] In order to make the technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention.

[0051]Due to the huge difference in storage speed and cost of different storage technologies, in order to access data efficiently, in the computer storage system, the most commonly used data is placed on the storage device with a fast reading and storage speed, and the infrequently used data is placed on the storage device with a fast reading and storage speed. on slow storage devices. A memory system is a hierarchy of storage devices with varying capacities, costs, and access times. Such as Figure 1a As shown, the buffer memory, main memory, and disk storage capacity of the CPU arranged from left to right are getting larger and larger, but the access speed is getting slower and slower. Fo...

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Abstract

The embodiment of the invention provides a manufacturing method of a central processing unit (CPU), the CPU and a control method of the CPU. The CPU comprises a gating layer with at least one kernel, and N levels of buffers in signal connection with the kernel, wherein N is equal to three or four; the Nth level of buffer in the N levels of buffers comprises a three-dimensional phase change memory; the three-dimensional phase change memory comprises a plurality of memory units; each memory unit comprises a first electrode layer, a gating layer, a second electrode layer, a phase change storage layer and a third electrode layer which are sequentially arranged in a stacked mode. Data storage is realized through switching between a crystalline state and an amorphous state of the phase change memory layer. And heating or quenching of the phase change memory element by the electrode is realized through conduction of the gating layer, so that switching between a crystalline state and an amorphous state of the phase change memory layer is realized.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a manufacturing method of a central processing unit (CPU, Central Processing Unit), a CPU and a control method thereof. Background technique [0002] In order to solve the contradiction between CPU computing speed and memory reading and writing speed, a CPU register has appeared. The CPU cache is a temporary data exchange between the CPU core and the memory. Its capacity is smaller than that of the memory, but its exchange speed is faster than that of the memory. The capacity of the CPU cache and the distance between the CPU cache and the CPU core affect the performance of the CPU. [0003] In the related art, the CPU register generally includes multiple levels, and the multi-level CPU register generally adopts Static Random-Access Memory (SRAM, Static Random-Access Memory). However, limited by the capacity and volume of the SRAM, the performance of the CPU is po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00G06F15/78G06F12/0897G06F15/76
CPCG06F15/7839G06F12/0897G06F2015/765H10B63/845H10N70/231H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD