Semiconductor etching equipment and etching method of silicon carbide wafer

Abstract

The invention discloses a semiconductor etching equipment and a silicon carbide wafer etching method. The semiconductor etching equipment includes a process chamber, wherein a magnetron sputtering assembly is arranged in the process chamber, and the magnetron sputtering assembly is installed in the on the side wall of the process chamber, above the carrier for carrying the wafer in the process chamber, the magnetron sputtering assembly includes a base assembly and a shielding assembly, the base assembly is used for fixing the target material and attracting plasma to bombard the target, and the shielding component can be rotated to selectively shield the target. Using the above-mentioned semiconductor etching equipment to etch the silicon carbide wafer can solve the problem that the sidewall and bottom surface of the formed etched structure are nearly vertical, which may cause tip discharge and thus easily damage the device.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a semiconductor etching equipment and an etching method for silicon carbide wafers. Background technique [0002] Silicon carbide (SiC) material, as the third-generation wide-bandgap semiconductor material, has a series of advantages such as large band gap, high thermal conductivity, high breakdown electric field strength, high saturation electron drift speed and ability to withstand extreme environmental changes, making SiC Materials have great application potential in high temperature, high frequency, high power, optoelectronics and radiation resistance. At present, silicon carbide materials are mainly used in the preparation of electronic devices. [0003] Silicon carbide material has high hardness and very stable chemical properties. Generally, dry etching is used to etch silicon carbide wafers. Generally speaking, in the process of etching silicon carbide w...

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Problems solved by technology

[0004] The invention discloses a semiconductor etching device and an etching method for a silicon carbide wafer, in order to solve the problem that when etching a silicon carbide wafer, the side wall and the bottom surface of the formed etching structure are nearly vertical, which will cause a tip discharge phenomenon, which is easy to damage device problem

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