High-low voltage testing equipment for power device

A technology of power devices and test equipment, which is applied in the field of power device parameter test equipment, can solve the problems of complex connection, low service life, large volume and cost, etc., and achieve the effects of high test accuracy, long service life and simple connection

Pending Publication Date: 2021-06-11
ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention aims at the deficiencies of the existing power device testing equipment, such as needing to manually switch connections, low test efficiency, error-prone, large volume, high cost, low service life, complicated connection, and low test accuracy, and provides a power Device high and low voltage test equipment, improve test efficiency, and at the same time, the volume is not too large and the cost is not too high

Method used

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  • High-low voltage testing equipment for power device
  • High-low voltage testing equipment for power device
  • High-low voltage testing equipment for power device

Examples

Experimental program
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Effect test

Embodiment 1

[0041] see Figure 1 to Figure 5 , a power device high and low voltage test equipment according to Embodiment 1 of the present invention, the power device high and low voltage test equipment includes:

[0042] A low-voltage instrumentation unit, the low-voltage instrumentation unit includes low-voltage instrumentation for testing low-voltage parameters of power devices;

[0043] A low-voltage control unit, the low-voltage control unit includes a low-voltage project control component for testing low-voltage parameters of power devices;

[0044] A high-voltage instrumentation unit, the high-voltage instrumentation unit includes high-voltage instrumentation for testing high-voltage parameters of power devices;

[0045] A high-voltage control unit, the high-voltage control unit includes a high-voltage project control component for testing high-voltage parameters of power devices;

[0046] A device adaptation unit, the device adaptation unit includes a device assembly connector, ...

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PUM

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Abstract

The invention belongs to the technical field of power device parameter testing equipment, and particularly relates to high-low voltage testing equipment for a power device. In order to overcome the defects that existing power device testing equipment needs to manually switch connecting wires, is low in testing efficiency and prone to making mistakes, or is large in size, high in cost, short in service life, complex in connection and low in testing accuracy, the invention adopts the following technical scheme that the power device high-low voltage testing equipment comprises: a low-voltage instrument equipment unit; a low-voltage control unit; a high-voltage instrument equipment unit; a high-voltage control unit; a device adaptation unit which comprises a device assembling connector, an adaptation connector, a position controller and a signal processor; and a test main control unit which sends an instruction according to the test requirement. The high-low voltage test equipment for the power device has the beneficial effect that various items can be automatically tested.

Description

technical field [0001] The invention belongs to the technical field of power device parameter testing equipment, and in particular relates to high and low voltage testing equipment for power devices. Background technique [0002] Power devices are the core of electric energy conversion and the foundation of electrical equipment. They play an irreplaceable role in consumer electronics, smart grids, electrified transportation, national defense and military industries. Commonly used power devices include diodes, IGBTs (InsulatedGate Bipolar Transistors) Transistor), MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor Metal-Oxide Semiconductor Field-Effect Transistor), SCR (Silicon ControlledRectifier Silicon Controlled Rectifier) ​​and so on. [0003] Taking IGBT as an example, the items to be tested include collector-emitter voltage (V CES , V CER , V CEX ), the gate-emitter voltage when the collector-emitter is short circuited (±V GES ), collector-emitter saturation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2607
Inventor 王异凡龚金龙刘黎杨青林氦邓志江曾振源张斌陈少华孙明王一帆宋琦华林敏钱昊刘微张雄清
Owner ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY
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