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A kind of polishing process of indium phosphide substrate

An indium phosphide and substrate technology, which is applied in the field of indium phosphide polishing, can solve the problems of high environmental requirements, unsatisfactory polishing uniformity, unstable polishing effect and the like, and achieves the effect of saving production costs

Active Publication Date: 2022-02-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the polishing of InP single crystal substrates mainly adopts electrochemical polishing technology or mechanical polishing technology, but the polishing effect of the two is not stable, and the polishing uniformity is not ideal, especially the chemical composition of the polishing liquid in the electrochemical polishing technology is relatively low. Complicated and demanding on the environment

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  • A kind of polishing process of indium phosphide substrate
  • A kind of polishing process of indium phosphide substrate
  • A kind of polishing process of indium phosphide substrate

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Embodiment Construction

[0028] Take figure 1 , The polishing apparatus of the indium phosphide of the present invention includes an electrolytic cell 3, and the anode disk support rod 8 is positioned at the bottom of the bottom of the electrolytic cell 3 by the anode elevator mechanism, which is hinged on the upper end of the anode disk support rod 8, by means of a cathode. The lifting mechanism is positioned on the cathode disk support rod 16 above the anode disk 7, and is disposed at the cathode disk 1 at the lower end of the cathode disk support rod 16, by means of the cathode polishing cloth 6, the polishing cloth 13 at the lower end surface of the cathode disk 1, by means of the connecting mechanism The graphite electrode plate 9 is disposed on the anode disk 7, and the intermediate drive mechanism is disposed on the end face of the graphite electrode plate 9, and is positioned in the graphite electrode plate 9 and the star meter 17 by means of anode polishing cloth. The polishing cloth 13, the anod...

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Abstract

A polishing process for an indium phosphide substrate, which belongs to the technical field of indium phosphide polishing, is realized based on an indium phosphide polishing device, and the polishing device includes an electrolytic tank and an anode positioned at the center of the bottom of the electrolytic tank by means of an anode lifting mechanism Disk support rod, anode disk hinged on the upper end of the anode disk support rod, cathode disk support rod positioned above the anode disk by means of the cathode lifting mechanism, cathode disk arranged at the lower end of the cathode disk support rod, and anode disk arranged on the anode disk by means of a connecting mechanism The graphite electrode plate, the planetary wheel set arranged on the end surface of the graphite electrode plate by means of the intermediate drive mechanism, the anode rotation drive mechanism connected with the intermediate drive mechanism, the cathode rotation drive mechanism connected with the cathode disc support rod, and the anode disc respectively connected to the anode disc by means of wires Polished DC power supply connected to contacts of support rods and cathode disk support rods. By improving the structure and process of the device itself, combined with the advantages of electrochemical polishing and mechanical polishing technology, the polishing process of indium phosphide greatly reduces the environmental requirements, and the polishing effect is ideal.

Description

Technical field [0001] The present invention belongs to the field of phosphide of indium polishing, and more particularly to a polishing process of an indium substrate. Background technique [0002] INP material is an important III-V compound semiconductor material with high electron mobility and high saturation and drift rate. It is the main base material for realizing millimeter wave circuits and terahertz electronic devices. The INP base has high frequency. Low noise, high efficiency, anti-irradiation, etc., is the primary choice of 100GHz above the frequency band, which has excellent performance in W-band and higher frequency millimeter wave circuits, applied in optical fiber communication, mobile communication, medical imaging, terahertz communications. widely. [0003] The polishing technology of INP is to measure the important indicators of its preparation level, the polishing interface is flat, and the roughness is low for subsequent epitaxial growth. Usually the polishin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00B24B29/02B24B57/02C25F3/30
CPCB24B1/00B24B29/02B24B57/02C25F3/30
Inventor 王书杰孙聂枫王阳李晓岚史艳磊邵会民付莉杰刘铮孙同年刘惠生
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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