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Film piezoelectric acoustic resonator, and manufacturing method thereof and filter

A piezoelectric acoustic wave and resonator technology, which is applied in the field of thin-film piezoelectric acoustic wave resonators and their manufacturing methods and filters, can solve problems such as acoustic wave leakage, and achieve the effects of increasing the contact area, improving the quality factor, and reducing parasitic effects.

Pending Publication Date: 2021-06-18
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention discloses a thin-film piezoelectric acoustic wave resonator and its manufacturing method and filter, which solves the problems of residual stress in the contact interface between the piezoelectric film and the electrode and the leakage of sound waves from the electrode and the piezoelectric film in the prior art

Method used

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  • Film piezoelectric acoustic resonator, and manufacturing method thereof and filter
  • Film piezoelectric acoustic resonator, and manufacturing method thereof and filter
  • Film piezoelectric acoustic resonator, and manufacturing method thereof and filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Embodiment 1, the first thin-film piezoelectric acoustic resonator:

[0056] An embodiment of the present invention provides a thin film piezoelectric acoustic resonator, image 3 A simplified perspective view of a thin-film piezoelectric acoustic wave resonator according to an embodiment of the present invention is shown, Figure 4 for image 3 Section view along X-X direction, please refer to image 3 and Figure 4 , thin-film piezoelectric acoustic resonators include:

[0057] the first substrate 50;

[0058] The upper electrode 20, the piezoelectric sheet 30 and the lower electrode 40 are arranged on the upper surface of the first substrate 50 and stacked sequentially from top to bottom;

[0059] The upper electrode 20, the piezoelectric sheet body 30 and the lower electrode 40 are provided with overlapping areas in a direction perpendicular to the surface of the piezoelectric sheet body 30;

[0060] In the overlapping area, a second gap 211 is provided betwee...

Embodiment 2

[0087] Embodiment 2, the second thin-film piezoelectric acoustic resonator:

[0088] refer to Figure 7 , the main difference between this embodiment and Embodiment 1 is that: the piezoelectric sheet body 30 is formed directly above the lower electrode 40 without a dielectric layer in between. At this time, the piezoelectric sheet body not exposed in the first gap 311 The lower surface of the piezoelectric sheet 30 is in direct contact with the upper surface of the lower electrode 40, and the lower surface of the piezoelectric sheet body 30 exposed in the first gap 311 is in contact with the piezoelectric sheet not exposed in the first gap 311. The lower surface of the electric sheet body 30 is not flush. At this time, the height of the first gap 311 is determined by the thickness of the sacrificial layer formed on the lower electrode 40 . Similarly, no dielectric layer may be provided between the piezoelectric sheet 30 and the upper electrode 20, and the bottom surfaces of ...

Embodiment 3

[0089] Embodiment 3, the forming method of the first thin-film piezoelectric acoustic resonator:

[0090] The third embodiment of the present invention provides a method for manufacturing a thin film piezoelectric acoustic resonator, Figure 8 A flow chart showing a method for manufacturing a thin-film piezoelectric acoustic wave resonator according to an embodiment of the present invention, Figure 9 to Figure 25 It shows a structural schematic diagram of different stages of a thin-film piezoelectric acoustic resonator manufacturing method according to an embodiment of the present invention, referring to Figure 8 , the production method includes:

[0091] S01: providing a first substrate, and forming an upper electrode on the first substrate;

[0092] S02: Form a laminated structure on the upper electrode, the laminated structure includes: a piezoelectric sheet, a first sacrificial layer located on the upper surface of the piezoelectric sheet, a first sacrificial layer loc...

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Abstract

The invention provides a thin film piezoelectric acoustic resonator, and a manufacturing method thereof and a filter. The thin film piezoelectric acoustic resonator comprises: a first substrate; an upper electrode, a piezoelectric plate body and a lower electrode which are arranged on the upper surface of the first substrate and are sequentially laminated from top to bottom, wherein the upper electrode, the piezoelectric plate body and the lower electrode are provided with overlapped areas in the direction perpendicular to the surface of the piezoelectric plate body, and in the overlapped areas, a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode; and an isolation cavity which surrounds the periphery of the piezoelectric plate body, wherein at least one connecting bridge is arranged between the piezoelectric plate body and the substrate, and the first gap and the second gap are communicated through the isolation cavity.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film piezoelectric acoustic wave resonator, a manufacturing method thereof, and a filter. Background technique [0002] Acoustic wave resonators based on piezoelectric induction are divided into surface acoustic wave resonators (Surface Acoustic Wave Resonator, SAWR) and bulk acoustic wave resonators (Bulk Acoustic Wave Resonator, BAWR), which are the basic elements of radio frequency filters, and radio frequency filters are A core device of today's wireless communication RF front-end and base station systems. Among them, the bulk acoustic wave resonator has excellent characteristics such as low insertion loss and high quality factor, especially at frequencies above 2.0GHz, it has obvious advantages over the surface acoustic wave resonator. [0003] Such as figure 1 As shown, a traditional bulk acoustic wave thin film resonator (Film Bulk Acoustic Resona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17H03H9/54
CPCH03H3/02H03H9/171H03H9/54H03H2003/023H03H2003/028H03H9/173H03H9/0561H03H9/05H03H9/13H03H9/17
Inventor 黄河罗海龙李伟齐飞
Owner NINGBO SEMICON INT CORP