Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-content heavy element doped beta-FeSi2-based thermoelectric material and preparation method thereof

A technology of thermoelectric materials and heavy elements, which is applied in the directions of thermoelectric device junction lead-out materials, metal silicides, etc., can solve the problem that the thermoelectric properties of β-FeSi2 materials have not made a big breakthrough, and achieve thermal stability performance and anti-oxidation performance. Outstanding, broad application prospects, environment-friendly effects

Inactive Publication Date: 2021-06-22
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even after years of research, β-FeSi 2 The thermoelectric performance of the material has not made a major breakthrough

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-content heavy element doped beta-FeSi2-based thermoelectric material and preparation method thereof
  • High-content heavy element doped beta-FeSi2-based thermoelectric material and preparation method thereof
  • High-content heavy element doped beta-FeSi2-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] β-Fe 0.96 Ir 0.04 Si 2 (M is Ir and x=0.04) semiconductor material polycrystalline body:

[0047] The raw material Fe, Ir and Si are mixed according to the molar ratio of 0.96:0.04:2, melted at 1750°C to become a liquid melt, and then condensed at a cooling rate of 20°C / s to obtain an ingot sample;

[0048] Grinding the ingot into powder, and performing discharge plasma sintering, the sintering temperature is 900°C, the sintering pressure is 65MPa, the sintering time is 10 minutes, the sintering atmosphere is a low-pressure argon atmosphere, and the pressure is 0.07MPa to obtain a dense block;

[0049] The dense block is vacuum-packed in a quartz tube and placed together in an annealing furnace for heat treatment. The details are as follows: heat up to 1150°C at a heating rate of 100°C / hour, hold for 24 hours, then drop to 900°C at a cooling rate of 100°C / hour, cool to room temperature after holding for 120 hours, and finally obtain β-Fe 0.96 Ir 0.04 Si 2 compound...

Embodiment 2

[0058] In this embodiment 2, β-FeSi 2 The preparation process of the base thermoelectric material is basically the same as in Example 1, with the difference: x=0.12.

[0059] Such as image 3 As shown, the resulting β-Fe 0.88 Ir 0.12 Si 2 The thermoelectric performance measurement of the polycrystalline block shows that in the measured temperature range (300-1000K), the material has moderate electrical conductivity (the electrical conductivity is 50000-85000Ω -1 m -1 between) and the Seebeck coefficient (the absolute value of the Seebeck coefficient value is between 100 and 180μV K -1 between). At the same time, the material exhibits low lattice thermal conductivity (the lattice thermal conductivity is between 2.0 and 3.5W m -1 K -1 between). The zT value of this material calculated from the property measurements is close to 0.42 at 1000K.

Embodiment 3

[0061] β-FeSi in this embodiment 3 2 The preparation process of the base thermoelectric material is basically the same as that of Example 1, with the difference: x=0.20.

[0062] Such as Figure 4 As shown, the resulting β-Fe 0.80 Ir 0.20 Si 2 The thermoelectric performance measurement of the polycrystalline block shows that in the measured temperature range (300-1000K), the material has moderate electrical conductivity (the electrical conductivity is 75000-120000Ω -1 m -1 between) and the Seebe coefficient (the absolute value of the Seebeck coefficient value is between 90 and 160μV K -1 between). At the same time, the material exhibits low lattice thermal conductivity (the lattice thermal conductivity is between 1.5 and 2.5W m -1 K -1 between). The zT value of this material calculated from the property measurements is close to 0.62 at 1000K.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thermoelectric figure of meritaaaaaaaaaa
Login to View More

Abstract

The invention relates to a high-content heavy element doped beta-FeSi2-based thermoelectric material and a preparation method thereof. The chemical composition of the beta-FeSi2-based thermoelectric material is Fe1-xMxSi2, M is at least one of Ta, W, Re, Os, Ir and Pt, and x is greater than 0 and less than or equal to 0.50.

Description

technical field [0001] The invention relates to a high-content heavy element doped β-FeSi 2 The invention relates to a base thermoelectric material and a preparation method thereof, belonging to the field of thermoelectric materials. Background technique [0002] At present, human society is developing rapidly. With the increasing prosperity of economy and culture, people's demand and consumption of natural gas, oil and other resources are increasing, and energy and environmental problems are becoming more and more prominent. In various energy use processes, a large proportion is not effectively utilized and is released into the atmosphere in the form of waste heat. Collecting and fully using this part of energy and improving energy utilization efficiency has become an important way to solve the energy crisis. In this context, thermoelectric materials have attracted extensive attention because they can directly realize the mutual conversion between thermal energy and elect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/58C04B35/622C04B35/645C01B33/06H01L35/20H10N10/854
CPCC04B35/58085C04B35/622C04B35/6455C01B33/06C04B2235/3891C04B2235/666C04B2235/6567H10N10/854
Inventor 史迅杜小龙仇鹏飞陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products