One-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor and preparation method thereof

A dilute magnetic semiconductor, zinc oxide-based technology, applied in the field of semiconductors, can solve the problems of expensive equipment, complicated preparation process, and restrictions on the development and application of ZnO-based DMSs spintronic devices, and achieve cheap raw materials, simple equipment requirements, and reaction conditions mild effect

Inactive Publication Date: 2012-08-22
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have disadvantages such as expensive equipment and complicated preparation processes, which limit the development and application of ZnO-based DMSs and corresponding spintronic devices.

Method used

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  • One-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor and preparation method thereof
  • One-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor and preparation method thereof
  • One-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 5.9mg Mn(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours.

[0024] The morphology of the powder was observed by scanning electron microscopy as figure 1 As shown, it can be seen from the figure that the obtained powder is a rod-like / needle-like structure with a rough surface, and is a one-dimensional mesoporous crystal nanomaterial self-assembled by small particles; the crystal form of the powder is analyzed by X-ray diffractometer, as shown in figure 2 It can be seen that this mesoporous crystal...

Embodiment 2

[0026] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 6.0mg Co(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0236emu / g, the coercive force is 94Oe, and it exhibits ferromagnetism at room temperature.

Embodiment 3

[0028] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 4.4mg Cu(CH 3 COO) 2 ·H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0159emu / g, the coercive force is 66Oe, and it exhibits ferromagnetism at room temperature.

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PUM

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Abstract

A one-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor and a preparation method thereof relate to a semiconductor. The one-dimensional mesoporous crystal zinc oxide based nickel-doped diluted magnetic semiconductor is a transition metal doped zinc oxide based DMSs (diluted magnetic semiconductors) one-dimensional mesoporous crystal nano material, the molecular formula is Zn1-xTMxO, wherein TM refers to transition metal, x refers to percentage of the doped component, and x=0.01-0.10. The method includes: dissolving zinc salt into ionic liquid, and heating until the solution is clear; adding transition metal salt into the solution until all dissolved to obtain mixed solution; and heating and refluxing the mixed solution, naturally cooling to the room temperature, washing obtained precipitates with water and ethanol sequentially, and drying the obtained powder to obtain the one-dimensional mesoporous crystal zinc oxide based diluted magnetic semiconductor with room-temperature ferromagnetism. The crystal growth temperature is low, equipment requirements are simple, reaction conditions are mild, solvent is non-volatile, the whole reaction process is environment-friendly, and raw materials are low in cost.

Description

technical field [0001] The invention relates to a semiconductor, in particular to a one-dimensional mesoporous zinc oxide-based nickel-doped dilute magnetic semiconductor and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductors (DMSs) refer to partial substitution of II-VI, IV-VI, or III-V by magnetic transition metals or rare earth metal elements (such as: Mn, Fe, Co, Ni, Cr and Eu, etc.) A new type of semiconductor material formed after some elements in the semiconductor. At present, people are mainly studying DMSs based on II-VI and III-V compounds. The semiconductor bases generally include GaAs, InAs, GaSb, GaN, GaP, ZnO, ZnS, ZnSe, ZnTe, etc. [0003] As a traditional wide-bandgap semiconductor material, ZnO has become a research hotspot in many fields due to its excellent performance, especially recently, ZnO-based DMSs have attracted worldwide attention due to its huge potential application prospects in spintronics. extensive a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02H01F1/40B82Y30/00B82Y40/00
Inventor 戴李宗肖文军吴廷华许一婷罗伟昂
Owner XIAMEN UNIV
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