Zinc oxide-based copper-doped dilute magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof

A dilute magnetic semiconductor, zinc oxide-based technology, applied in the direction of zinc oxide/zinc hydroxide, inorganic material magnetism, etc., can solve the problems of complex preparation process, expensive equipment, and restrictions on the development and application of ZnO-based DMSs spintronic devices. Achieve the effect of simple equipment requirements, cheap raw materials, and mild reaction conditions

Inactive Publication Date: 2014-04-30
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have disadvantages such as expensive equipment and complicated preparation processes, which limit the development and application of ZnO-based DMSs and corresponding spintronic devices.

Method used

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  • Zinc oxide-based copper-doped dilute magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof
  • Zinc oxide-based copper-doped dilute magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof
  • Zinc oxide-based copper-doped dilute magnetic semiconductor of one-dimensional mesoporous crystal and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0023] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 5.9mg Mn(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours.

[0024] The morphology of the powder was observed by scanning electron microscopy as figure 1 As shown, it can be seen from the figure that the obtained powder is a rod-like / needle-like structure with a rough surface, and is a one-dimensional mesoporous crystal nanomaterial self-assembled by small particles; the crystal form of the powder is analyzed by X-ray diffractometer, as shown in figure 2 It can be seen that this mesoporous crystal...

Embodiment 2

[0026] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 ) 4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 6.0mg Co(CH 3 COO) 2 4H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0236emu / g, the coercive force is 94Oe, and it exhibits ferromagnetism at room temperature.

Embodiment 3

[0028] In a 250mL round bottom flask, 100mg Zn(CH 3 COO) 2 2H 2 O added 10g ionic liquid N(C 4 h 9 )4 OH·30H 2 O, dissolved under magnetic stirring, heated to 30 ° C for a period of time until the solution was transparent. Then add 4.4mg Cu(CH 3 COO) 2 ·H 2 O until all dissolved. Heated to 100 ° C reflux 24h. Naturally cooled to room temperature, the obtained precipitate was washed three times with double distilled water, and then washed three times with ethanol, and the obtained powder was dried at 60°C for more than 24 hours. The magnetic test results show that the saturation magnetization is 0.0159emu / g, the coercive force is 66Oe, and it exhibits ferromagnetism at room temperature.

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Abstract

The invention discloses a zinc oxide-based copper-doped dilute magnetic semiconductor of a one-dimensional mesoporous crystal and a preparation method thereof, which relate to a semiconductor. The zinc oxide-based copper-doped dilute magnetic semiconductor of the one-dimensional mesoporous crystal is a transition metal-doped ZnO-based DMSs one-dimensional mesoporous crystal nanomaterial of which the molecular formula is Zn1-xTMxO, wherein TM is a transition metal; and x refers to the percentage of a doped component, and is equal to 0.01-0.10. The method comprises the following steps of: dissolving a zinc salt into an ionic liquid, and heating till a solution becomes transparent; adding a transition metal salt into the solution till the transition metal salt is fully dissolved to obtain a mixed solution; and heating and refluxing the mixed solution, naturally cooling to the room temperature, washing the obtained precipitate with water and ethanol in sequence, and drying the obtained powder to obtain the ZnO-based dilute magnetic semiconductor of a one-dimensional mesoporous crystal with room temperature ferromagnetism. The zinc oxide-based copper-doped dilute magnetic semiconductor has the advantages of low crystal growing temperature, low equipment requirement, mild reaction conditions, non-volatilization of a solvent, environmentally-friendly reaction process and cheap raw materials.

Description

technical field [0001] The invention relates to a semiconductor, in particular to a one-dimensional mesoporous zinc oxide-based copper-doped dilute magnetic semiconductor and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductors (DMSs) refer to partial substitution of II-VI, IV-VI, or III-V by magnetic transition metals or rare earth metal elements (such as: Mn, Fe, Co, Ni, Cr and Eu, etc.) A new type of semiconductor material formed after some elements in the semiconductor. At present, people are mainly studying DMSs based on II-VI and III-V compounds, and semiconductor bases generally include GaAs, InAs, GaSb, GaN, GaP, ZnO, ZnS, ZnSe, ZnTe, etc. [0003] As a traditional wide-bandgap semiconductor material, ZnO has become a research hotspot in many fields due to its excellent performance, especially recently, ZnO-based DMSs have attracted worldwide attention due to its huge potential application prospects in spintronics. extensive a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02H01F1/40
Inventor 戴李宗肖文军吴廷华许一婷罗伟昂
Owner XIAMEN UNIV
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