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A kind of SE diffusion method and obtained silicon wafer

A diffusion method and technology of silicon wafers, applied in the field of solar energy, can solve problems such as insufficient P concentration, poor ohmic contact of silicon wafers, high square resistance, etc., and achieve the effect of increasing P concentration, solving poor ohmic contact, and improving battery opening voltage and current

Active Publication Date: 2022-07-29
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the technical problem that the high square resistance of the existing SE diffusion process leads to insufficient P concentration in the PSG on the surface of the silicon wafer, and the high square resistance after laser doping, which eventually leads to poor ohmic contact in the heavily doped area of ​​the silicon wafer.

Method used

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  • A kind of SE diffusion method and obtained silicon wafer
  • A kind of SE diffusion method and obtained silicon wafer
  • A kind of SE diffusion method and obtained silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] A novel SE diffusion process for increasing the P concentration in PSG, including low-temperature boat entry, temperature and pressure stabilization, low-temperature and low-pressure deposition, rapid heating and pressurization, high-temperature and high-pressure propulsion and oxidation, source deposition during cooling, low-temperature oxidation and low-temperature Steps to get out of the boat, the specific steps are as follows:

[0058] (1) Low-temperature boat feeding: put the textured polycrystalline silicon wafer into a diffusion furnace, set the furnace tube temperature to 770°C, and feed 3000ml / min of N 2 ;

[0059] (2) Stable temperature and pressure: control N 2 The flow rate is 3000ml / min, the furnace tube temperature is set to 790℃, and the pressure is 100mbar;

[0060] (3) Low temperature and low pressure deposition: feed 500ml / min of O 2 , 500ml / min N 2 -POCl 3 , set the furnace tube temperature to 790℃, the time to 16min, and the pressure to be 100mb...

Embodiment 2

[0067] Except that step (6) set the furnace tube temperature down to 800°C and set the cooling time 40min to make the cooling rate be 1.5°C / min, other methods and conditions were the same as in Example 1.

Embodiment 3

[0069] Except that step (6) set the furnace tube temperature down to 800 ℃, set the cooling time 20min to make the cooling rate be 3 ℃ / min, other methods and conditions are the same as in Example 1.

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Abstract

The invention discloses an SE diffusion method and the obtained silicon wafer, and relates to the technical field of solar cells. The method includes the step of cooling and depositing: introducing a phosphorus source during the cooling process to grow the PSG layer. The SE diffusion process of the present invention can effectively increase the P concentration in the PSG by supplementing the phosphorus source during the cooling process, and a good heavily doped region can be formed after laser doping, which solves the problem of poor ohmic contact in the high square resistance selective emitter battery. It is beneficial to the preparation of high square resistance batteries, to improve the battery open voltage and current, and then to improve the battery efficiency.

Description

technical field [0001] The invention relates to the technical field of solar energy, and relates to an SE diffusion method and the obtained silicon wafer. Background technique [0002] In the current field of solar cell technology, the application of high-efficiency cell technology is constantly improving. For example, high-efficiency cells such as PERC, the conversion efficiency of their cells is constantly improving. Among the continuous stacking technologies, one of them can be doped with laser light to prepare selective emission Electrode (SE) cells. [0003] The preparation of SE cells mainly has two characteristics: 1) the contact area between the metal grid line and the silicon wafer is a heavily doped area, which can form a good ohmic contact and improve the fill factor; 2) the light-receiving area is a lightly doped area, which can improve the For short-wave response, the low surface concentration reduces the recombination of minority carriers, thereby increasing t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B31/06
CPCH01L31/182C30B31/06Y02E10/546
Inventor 刘娜陈瑶刘运宇邓伟伟
Owner CSI CELLS CO LTD