A high voltage pn bridge gate drive circuit

Abstract

A high-voltage PN bridge gate drive circuit, using a voltage stabilizing circuit to reduce the power supply voltage to supply power to the input stage circuit, using a level conversion circuit to convert the signal of the input stage into a voltage that can drive a high-voltage thin gate oxide PMOS tube, and using a resistor to divide the voltage Judging the relationship between the output voltage and the set voltage, when used to drive the power PMOS tube, when the output voltage of the gate drive circuit of the PMOS tube is lower than the set value, the current capability of the drive tube NMOS tube is reduced or even turned off , so that the output voltage rises and dynamically stabilizes around the set value; similarly, when used to drive a power NMOS tube, the output voltage rises and dynamically stabilizes around the set value. The set value can be between GND and VCC Any value between, and determined by the resistance ratio and the threshold voltage of the MOS tube. The invention reduces the complexity of the circuit structure and reduces the power consumption, which is beneficial to improving the integration degree of the driving chip and reducing the cost.

Description

technical field [0001] The invention belongs to the technical field of medium and high voltage power integrated circuits, relates to a medium and high voltage motor drive control technology, and is a high voltage PN bridge gate drive circuit. Background technique [0002] Medium and high voltage motor drives are usually driven by a bridge structure formed by a combination of PMOS transistors and NMOS transistors. The bridge is called a PN bridge in academia and industry. In low-voltage applications, the inverter is the simplest PN bridge, and its driving method is also very simple. The PN bridge can be directly driven by the "0" and "1" level voltages of TTL logic. In order to prevent the shoot-through loss at the moment of switching the PN bridge switch, the PMOS transistor and the NMOS transistor in the PN bridge are usually driven separately, and the zero-voltage switching technology is used to reduce the loss of the system. A typical application circuit such as figure ...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem that the structure of the traditional PN bridge driving circuit is complex and cannot be realized in the thin gate oxide device process, the present invention proposes a new type of PN bridge driving circuit, which can not only reduce the number of LDOs, but also can be used in the small size thin gate oxide BCD process realized in

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