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Preparation method for improving voltage endurance capability of silicon dioxide layer

A technology of silicon dioxide and pressure resistance, which is applied in the preparation field of the preparation technology field, can solve the problems of increased stress and low pressure resistance level of the silicon dioxide layer, reduce the heating and cooling rate, and meet the requirements of the voltage resistance index. , avoid the effect of early failure

Inactive Publication Date: 2021-06-25
中电晶华(天津)半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the problem of the low withstand voltage level of the silicon dioxide layer of the existing VDMOS power device, by increasing the process temperature and reducing the heating and cooling rate, increasing the nitrogen annealing process to release the stress accumulated during the heat treatment of the silicon dioxide layer , so as to improve the growth quality of the silicon dioxide layer, and obtain a preparation method for improving the pressure resistance of the silicon dioxide layer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] In the first step, the silicon dioxide layer is grown in a low-pressure oxidation furnace. Before the growth, the quartz crystal boat and silicon carbide paddle used must be cleaned with acid to remove the attachments on the inner wall of the adsorption crystal boat slot and the surface of the silicon carbide paddle. The furnace tube in the furnace is heated, the temperature is set at 850°C, and process nitrogen is introduced for protection. The process nitrogen flow rate is set at 12 L / min, and the inflow time is 5 minutes. After that, the process nitrogen flow rate is increased, and the flow rate is set at 20 L / min, at high temperature, the particles deposited in the early stage of the furnace tube are removed by purging, the purging time is set to 10min, and then the process nitrogen flow rate is restored to 12 L / min, and the heating rate of the furnace tube is set to 10°C / min, when the temperature of the furnace tube rises to 850°C, it is stable for 15 minutes;

[...

Embodiment 2

[0031] In the first step, the silicon dioxide layer is grown in a low-pressure oxidation furnace. Before the growth, the quartz crystal boat and silicon carbide paddle used must be cleaned with acid to remove the attachments on the inner wall of the adsorption crystal boat slot and the surface of the silicon carbide paddle. The furnace tube in the furnace is heated, the temperature is set at 850°C, and process nitrogen is introduced for protection. The process nitrogen flow rate is set at 12 L / min, and the inflow time is 5 minutes. After that, the process nitrogen flow rate is increased, and the flow rate is set at 20 L / min, at high temperature, the particles deposited in the early stage of the furnace tube are removed by purging, the purging time is set to 10min, and then the process nitrogen flow rate is restored to 12 L / min, and the heating rate of the furnace tube is set to 10°C / min, when the temperature of the furnace tube rises to 850°C, it is stable for 15 minutes;

[...

Embodiment 3

[0040] In the first step, the silicon dioxide layer is grown in a low-pressure oxidation furnace. Before the growth, the quartz crystal boat and silicon carbide paddle used must be cleaned with acid to remove the attachments on the inner wall of the adsorption crystal boat slot and the surface of the silicon carbide paddle. The furnace tube in the furnace is heated, the temperature is set at 850 °C, and process nitrogen is introduced for protection. The process nitrogen flow rate is set at 12 L / min, and the inflow time is 5 minutes. After that, the process nitrogen flow rate is increased, and the flow rate is set at 20 L / min, at high temperature, the particles deposited in the early stage of the furnace tube are removed by purging, the purging time is set to 10min, and then the process nitrogen flow rate is restored to 12 L / min, and the heating rate of the furnace tube is set to 10°C / min, when the temperature of the furnace tube rises to 850 ℃, stabilize for 15 minutes;

[00...

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Abstract

The invention relates to a preparation method for improving the pressure resistance of a silicon dioxide layer. The preparation method comprises the following steps: cleaning a quartz boat and a silicon carbide paddle with acid liquor; arranging silicon substrate slices on a wafer boat and feeding the wafer boat into a furnace tube from a furnace opening through the silicon carbide paddle, wherein the reference surfaces of the silicon substrate slices are uniformly upward; raising a temperature from the current 850 DEG C of the furnace tube to 1000 DEG C, introducing hydrogen, introducing gaseous dichlorosilane as a growth assisting gas, introducing oxygen and oxyhydrogen for ignition, carrying out a wet oxidation process, and stopping introducing nitrogen; increasing oxygen flow, introducing hydrogen, and introducing trichloroethylene gas; reducing the temperature from 1000 DEG C to 850 DEG C, keeping introducing nitrogen, and forming the silicon dioxide layer on the silicon substrate slices; and annealing the silicon dioxide layer in a nitrogen annealing furnace so as to complete the whole process. According to the invention, the quality of the silicon dioxide layer is obviously optimized, the voltage endurance capability of the silicon dioxide layer can reach the level of 90 V to 100 V, and the requirement of a current terminal customer on a voltage endurance capability index can be met.

Description

technical field [0001] The invention relates to a preparation method in the technical field of preparation of silicon dioxide layer materials, in particular to a preparation method for improving the pressure resistance of a silicon dioxide layer. Background technique [0002] VDMOS power device is a kind of power device. The basic structure includes silicon substrate, epitaxial layer, source, drain gate polysilicon, and gate silicon dioxide layer. The most important process is the preparation of high-quality silicon dioxide layer. . The stacking fault defects induced by gate oxidation lead to gate leakage failure, and its quality is directly related to the electrical performance of VDMOS power devices. [0003] The quality of the silicon dioxide layer has a lot to do with the quality of the silicon wafer itself. The silicon substrate used in the VDMOS power device is processed with a Czochralski single crystal silicon wafer, and the oxygen element precipitation during the C...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/02
CPCH01L21/02164H01L21/02238H01L21/02337H01L21/28185H01L21/28211
Inventor 董彬唐发俊李明达居斌薛兵
Owner 中电晶华(天津)半导体材料有限公司
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