Fin type field effect transistor and semiconductor device

Abstract

The invention provides a fin type field effect transistor and a semiconductor device. According to the invention, a diode structure composed of a first conductive type well layer, a second conductive type deep well layer and a second conductive type well layer is formed in a diode in a manufacturing process of a fin type field effect transistor, so that the leakage current condition of the diode in the manufacturing process of the fin type field effect transistor can be reduced; and through the optimization design of the occupied area of the first conductive type well layer, the second conductive type well layer and the second conductive type deep well layer, the performance of the diode in the manufacturing process of the fin type field effect transistor is improved, the design of the diode in the fin type field effect transistor is optimized, and the limitation of the layout design of the fin type field effect transistor is reduced.

Description

technical field [0001] The invention relates to the technical field of fin field effect transistor manufacturing process, and more specifically, relates to a fin field effect transistor and a semiconductor device. Background technique [0002] Field Effect Transistor (Field Effect Transistor, FET) is conducted by majority carriers, and is also called unipolar transistor. It is a voltage-controlled semiconductor device. With high input resistance (10^ 7 ~10^ 12 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area, etc., are widely used in the field of semiconductor preparation. With the continuous maturity of FET technology and people's continuous pursuit of high-performance devices, technicians have developed a new type of field effect transistor-FinFET (Fin Field Effect Transistor). In the structure of FinFET, the gate is shaped like a fin. The 3D structure can be used to control the on an...

AI Technical Summary

Problems solved by technology

However, there are still many limitations in the design of various types of devices of the existing fin field effect transistors.

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