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Tungsten composite film layer and growth method thereof, and monolithic 3DIC

A technology of composite film layer and growth method, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc. The effect of improving smoothness

Active Publication Date: 2021-06-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above analysis, the present invention aims to provide a tungsten composite film layer and its growth method, and a monolithic 3DIC to solve the tungsten stress of the existing method of growth Large, causing the problem of wrinkling of the monocrystalline silicon layer

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  • Tungsten composite film layer and growth method thereof, and monolithic 3DIC
  • Tungsten composite film layer and growth method thereof, and monolithic 3DIC
  • Tungsten composite film layer and growth method thereof, and monolithic 3DIC

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Embodiment Construction

[0044] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0045] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

The invention relates to a tungsten composite film layer and a growth method thereof, and a monolithic 3DIC, belongs to the technical field of semiconductor manufacturing, and solves the problem of wrinkling of a monocrystalline silicon layer caused by a large stress of tungsten grown by an existing method. The tungsten composite film layer is located on a semiconductor substrate and comprises a first film layer close to the side of the semiconductor substrate and a second film layer away from the side of the semiconductor substrate; the stress directions of the first film layer and the second film layer are opposite; the stress of the first film layer is a compressive stress, and the stress of the second film layer is a tensile stress; and the first film layer includes a plurality of film layers. The growth method of the tungsten composite film layer comprises the following steps: growing the first film layer on the semiconductor substrate; and growing the second film layer with the stress direction opposite to that of the first film layer on the first film layer. According to the invention, the low stress of the tungsten composite film layer is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a tungsten composite film layer, a growth method thereof, and a monolithic 3DIC. Background technique [0002] As Moore's Law is gradually approaching the bottleneck, it has become increasingly difficult to improve chip performance by shrinking the semiconductor process. In order to solve this problem, the semiconductor industry has proposed the method of using advanced packaging and heterogeneous computing to continue to improve the performance of the chip system. Traditional general-purpose chips try to use a general-purpose processor to solve all application problems, so it is difficult to meet the needs of applications today when Moore's Law is close to failure and the performance growth of processors is slowing down; under the paradigm of advanced packaging and heterogeneous computing, many The chips are tightly integrated in one package, and each chip i...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76838H01L21/76877
Inventor 刘战峰殷华湘刘卫兵毛淑娟罗彦娜
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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