Direct-current on-off device based on Si IGBT device and SiC JFET device parallel combination design and control method
A technology of DC interruption and control method, applied in the field of power electronics, can solve the problems of unsatisfactory rapidity, low reliability, difficult to achieve synchronization, etc., to reduce control complexity, meet rapidity requirements, and improve shutdown. The effect of reliability
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[0033]The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0034] This embodiment is a DC breaking device designed based on the parallel combination of Si IGBT devices and SiC JFET devices, such as figure 1 As shown, it is mainly composed of a sampling module, an optocoupler isolation module, a single-chip microcomputer control module, a drive module, and a main switch module. The sampling module is connected to the main circuit, the optocoupler isolation module is connected to the sampling module, and the single-chip m...
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