Resistive random access memory and manufacturing method thereof

Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises an interlayer dielectric layer, a first bottom contact structure and a second bottom contact structure which are formed on a substrate. The first memory cell is on the first bottom contact structure. The first memory cell includes a first bottom electrode layer, and the first bottom electrode layer includes a first conductive region. The pattern of the first conductive region vertically projected on the first bottom contact structure is a first projection pattern. A second memory cell is on the second bottom contact structure. The second memory cell includes a second bottom electrode layer, and the second bottom electrode layer includes a second conductive region. The pattern of the second conductive region vertically projected on the second bottom contact structure is a second projection pattern. The second projection pattern is different from the first projection pattern. According to the invention, on the premise of not increasing the complexity of the manufacturing process, the production cost and the production time, the disorder degree of the read current can be greatly increased.

Description

technical field [0001] The present invention relates to a memory device, and in particular to a resistive random access memory for improving the read current randomness and a manufacturing method thereof. Background technique [0002] In the prior art resistive random access memory (RRAM), a plurality of memory cells are included in an array region, and each memory cell includes a patterned bottom electrode layer, a resistance switching layer and a top electrode layer. When a forming voltage or a writing voltage is applied to the memory cell, the oxygen ions will be driven by the voltage to leave the resistance switching layer. The equivalent positive-valent oxygen vacancies left in the resistance switching layer form conductive paths (or conductive filaments), thereby converting the resistance switching layer from a high-resistance state to a low-resistance state. When an erase voltage is applied, the oxygen ions return to the resistive switching layer and combine with equ...

AI Technical Summary

Problems solved by technology

However, such a method requires complex circuit design, greatly increasing the complexity of the manufacturing process, production time and production cost

Furthermore, this additional control circuit will also occupy a large available space, which is not conducive to the miniaturization of memory devices.

Images