Organic electroluminescence structure, manufacturing method thereof and display device

Abstract

The invention relates to an organic electroluminescence structure, a manufacturing method thereof and a display device. The organic electroluminescent structure comprises: a substrate; a passivation protection layer which is formed on one side of the substrate, wherein a plurality of internally tangent parts arranged at intervals are formed on the side, away from the substrate, of the passivation protection layer, each internally tangent part is provided with a first face facing the substrate and a second face away from the substrate, and the orthographic projection of the first face on the substrate is located in the orthographic projection of the second face on the substrate, and a non-zero distance is formed between the edge of the first surface and the edge of the second surface; an anode layer which comprises a plurality of anodes which are arranged at intervals, and each anode is correspondingly formed on the second surface; an organic light-emitting functional layer which is provided with a hole injection layer, wherein the hole injection layer comprises a plurality of hole injection blocks which are arranged at intervals, and each hole injection block is correspondingly formed on one anode; and a cathode layer which is formed on one side, deviating from the anode layer, of the organic light-emitting functional layer. According to the scheme, the crosstalk problem can be improved.

Description

Technical field [0001] The present application relates to the field of display, in particular, to an organic electroluminescence structure and a production method thereof, a display device. Background technique [0002] OLED (Organic Light-Emitting Diodes, organic light emitting diode) display technology as a new type of display technology has been widely used in smart watches, mobile phones, tablet computers, monitors, and other fields. OLED display as silicon using silicon as an active backplane driver, having a high pixel density, highly integrated, small, easy to carry, seismic performance, low power consumption and other outstanding features, the study of the technology currently displayed hotspot One. [0003] However, the existing silicon-based OLED prone to problems of crosstalk (Crosstalk) occurs between the different sub-pixels, one important reason is that since the hole injection layer (HIL) in direct contact with the whole layer of the anode layer is disposed togethe...

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Problems solved by technology

[0003] However, the existing silicon-based OLEDs are prone to the problem of crosstalk between different sub-pixels (Crosstalk). One of the important reasons is that the hole injection layer (HIL) directly in contact with each anode is a common layer set up for the entire layer. And it has low resistivity, therefore, the HIL layer with low resistivity can easily lead to conduction between sub-pixels

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