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Memory circuit and reading method and recovery method thereof

A storage circuit and inverting circuit technology, applied in non-volatile storage circuits and storage methods and reading fields, can solve the problems of many devices, complex storage circuits, poor performance, etc., and achieve low operating voltage and read and write speed. quick effect

Pending Publication Date: 2021-07-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] However, the existing memory circuits are relatively complex and have many devices, resulting in high cost and poor performance of the memory.

Method used

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  • Memory circuit and reading method and recovery method thereof
  • Memory circuit and reading method and recovery method thereof

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Embodiment Construction

[0024] As described in the background, existing memory circuits are relatively complex and have many devices, resulting in high cost and poor performance of the memory.

[0025] Generally, in order to be able to store complementary data “1” and “0” in pairs in existing memory circuits, it is necessary to use multiple magnetic memories to store data “1” and data “0” respectively, and, in order to control the multiple magnetic memories The memory needs to use more transistors. Therefore, the number of devices in the memory circuit is large, which not only leads to the complexity of the memory circuit, but also leads to high heat generation and poor performance of the memory circuit, and also leads to high cost of the memory.

[0026]In order to solve the above problems, the technical solution of the present invention provides a storage circuit, including: a volatile storage unit capable of storing “0” data and “1” data, and the volatile storage unit includes a first node and a s...

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PUM

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Abstract

The invention discloses a memory circuit and a storage method and a recovery method based on the memory circuit; and the memory circuit comprises: a volatile memory unit which comprises a first node and a second node; the spin-orbit momentum magnetic memory that comprises a spin Hall effect layer, a first magnetic tunnel junction and a second magnetic tunnel junction, and the spin Hall effect layer comprising a first end and a second end; and the switch assembly that enables the first end to be coupled to the first node and the second node respectively, enables the first magnetic tunnel junction to be coupled to the first node, and enables the second magnetic tunnel junction to be coupled to the second node. The memory circuit can reduce the cost of the memory and improve the performance of the memory.

Description

technical field [0001] The present invention relates to the technical field of integrated circuits, in particular to a non-volatile storage circuit, a storage method and a reading method thereof. Background technique [0002] Memory is widely used in a variety of electronic devices, such as cellular telephones, digital cameras, personal digital assistants, medical electronics, mobile computing devices, non-mobile computing devices, and data servers. Memory can include non-volatile memory or volatile memory. [0003] Non-volatile memory includes magnetic memory (MRAM), among others, which allows information to be stored and retained when not connected to a power source, in contrast to volatile memory. [0004] Volatile memory includes static random access memory (Static Random-Access Memory, SRAM), dynamic random access memory (Dynamic Random Access Memory, DRAM), flash memory (Flash), etc., compared with nonvolatile memory memory, Volatile memory has the characteristics of...

Claims

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Application Information

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IPC IPC(8): G11C11/16G11C11/18G11C11/409G11C16/08
CPCG11C11/18G11C11/409G11C11/16G11C16/08
Inventor 刘盼盼张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP
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