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Composite substrate and preparation method, and radio frequency integrated chip preparation method

A composite substrate and substrate technology, applied in semiconductor/solid-state device manufacturing, piezoelectric/electrostrictive/magnetostrictive devices, semiconductor devices, etc., can solve the problem of large area occupied by front-end modules

Active Publication Date: 2022-06-07
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a composite substrate and its preparation method, and a radio frequency chip integrated chip preparation method to solve the problem of large occupied area of ​​the existing front-end module

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  • Composite substrate and preparation method, and radio frequency integrated chip preparation method
  • Composite substrate and preparation method, and radio frequency integrated chip preparation method
  • Composite substrate and preparation method, and radio frequency integrated chip preparation method

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Embodiment Construction

[0022] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.

[0023] Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. It should be noted that, in the case of no conflict, various features in the embodiments of the present in...

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Abstract

The invention provides a composite substrate, a preparation method, and a preparation method of a radio frequency integrated chip, and relates to the field of semiconductor technology. The method includes: providing a gallium arsenide substrate, and etching a heterojunction bipolar transistor epitaxial layer structure in a high electron mobility transistor region To expose the high electron mobility transistor epitaxial layer structure, the high electron mobility transistor epitaxial layer structure is located in the high electron mobility transistor region, the heterojunction bipolar transistor region and the bonding region, and the heterojunction bipolar transistor epitaxial layer structure is located in the heterojunction bipolar transistor region The MJBT region and the bonding region; depositing a bonding layer on the HJBT epitaxial layer structure in the bonding region. The bonded piezoelectric layer is formed by bonding on the bonding layer, so that the high electron mobility transistor epitaxial layer structure, the heterojunction bipolar transistor epitaxial layer structure and the bonded piezoelectric layer can be integrated, and the chip can be improved during packaging. Integrated, reducing wiring and volume.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular, to a composite substrate and a preparation method thereof, and a preparation method of a radio frequency integrated chip. Background technique [0002] 5G services were launched in some countries in 2019 and many in 2020, including China. A front-end module is usually included in the user equipment, and the front-end module usually includes components such as filters, high electron mobility transistors, heterojunction bipolar transistors, and the like. Due to the problem of poor integration due to the physical characteristics of each component in the front-end module, it is usually necessary to make multiple independent components, which will occupy more space, but with the heterojunction dual carrier and false The introduction of crystalline high-speed electron mobility transistors (BiHEMTs), which can integrate high electron mobility transistors and heterojunction bip...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/18H01L29/778H01L29/73H01L41/08H10N30/00
CPCH01L21/02008H01L21/185H01L29/73H10N30/706H10N30/704
Inventor 朱庆芳蔡文必罗捷
Owner XIAMEN SANAN INTEGRATED CIRCUIT