Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium nitride power device gate driving circuit

A technology for gate drive circuits and power devices, applied in electrical components, electronic switches, pulse technology, etc., can solve the problem that level shift circuits do not have anti-interference ability, so as to improve the working ability of floating ground negative pressure, avoid cost, simple structure

Pending Publication Date: 2021-07-13
国硅集成电路技术(无锡)有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present application provides a gallium nitride power device gate drive circuit, which is used to solve the problem that the level shift circuit using the digital common mode protection circuit does not have good anti-interference ability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium nitride power device gate driving circuit
  • Gallium nitride power device gate driving circuit
  • Gallium nitride power device gate driving circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the following will further describe the embodiments of the present application in detail in conjunction with the accompanying drawings.

[0047] Please refer to Figure 8 , which shows a structural flowchart of a GaN power device gate drive circuit provided by an embodiment of the present application. The GaN power device gate drive circuit may include: a narrow pulse generation circuit 810 , a high-voltage level shift circuit 820 , a dynamic asymmetric state generation circuit 830 , a common-mode shielding logic 840 , an RS flip-flop 850 and a buffer stage 860 .

[0048] Such as Figure 8 As shown, the input end of the narrow pulse generating circuit 810 is used as the input end IN_H of the GaN power device gate drive circuit, and the first output end SET of the narrow pulse generating circuit 810 is connected to the first input end of the high volta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a gallium nitride power device gate driving circuit, and belongs to the technical field of high-voltage power integrated circuits. The circuit comprises a narrow pulse generation circuit, a high-voltage level shift circuit, a dynamic asymmetric state generation circuit, common-mode shielding logic, an RS trigger and a buffer stage which are connected in sequence, and the high-voltage level shift circuit further comprises a latch, the dynamic asymmetric state generation circuit is used for dynamically changing a balance point of the latch when power voltage transiently changes, and the latch shifts to an upward stable state when the balance point changes. Therefore, the output signal of the gallium nitride power device gate drive circuit is kept unchanged. According to the invention, the anti-noise interference capability of the chip can be improved while the transmission delay is reduced.

Description

technical field [0001] The embodiments of the present application relate to the technical field of high-voltage power integrated circuits, and in particular to a gate drive circuit of a gallium nitride power device. Background technique [0002] In a Buck (step-down) type DC (Direct Current, direct current)-DC converter, usually two power devices connected in series are connected between an input high voltage and ground. Since N-type power devices have lower on-resistance and smaller parasitic capacitance than P-type power devices, two N-type power devices are usually used in high-voltage applications above 300V or even 600V, such as figure 1 Shown, M H is the high-side switching device in the above DC-DC converter, M L is the low-side switching device in the above DC-DC converter. Usually a floating gate driver chip is used to effectively drive the high-side switching device M H , the floating gate driver chip includes low-voltage input logic, high-voltage region gate d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 张允武陆扬扬
Owner 国硅集成电路技术(无锡)有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com