A kind of cadmium indium selenide/zinc copper sulfide nanocomposite material and its preparation method and application
A zinc copper sulfide and cadmium selenide technology, applied in the field of photocatalysis, can solve the problems of high recombination rate and wide band gap of photogenerated carriers, and achieve the effects of improved hydrogen production effect, easy operation, and large-scale production
Active Publication Date: 2022-05-31
QINGDAO UNIV OF SCI & TECH
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] In order to solve the problems of high recombination rate of photogenerated carriers and wide band gap when quantum dots and sulfides are used alone, the present invention provides a ternary sulfide zinc copper sulfide as the substrate, using the water phase ternary alloy quantum dot selenium The cadmium indium selenide / zinc copper sulfide nanocomposite material obtained by compounding cadmium indium selenide and zinc copper sulfide substrate, and the preparation method of the cadmium indium selenide / zinc copper sulfide nanocomposite material and its application in photocatalytic hydrogen production
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreExamples
Experimental program
Comparison scheme
Effect test
Embodiment 1
Embodiment 2
Embodiment 3
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More
Abstract
The invention provides a cadmium indium selenide / zinc copper sulfide nanocomposite material, a preparation method thereof, and an application in photocatalytic hydrogen production. The preparation method of the cadmium indium selenide / zinc copper sulfide comprises the following steps: (1) utilizing a solvothermal method to synthesize ternary sulfide zinc copper sulfide; (2) synthesizing an aqueous phase cadmium indium selenide quantum dot; (3) combining The cadmium indium selenide / zinc copper sulfide is obtained by compounding the ternary sulfide zinc copper sulfide and the cadmium indium selenide quantum dot. In addition, the cadmium indium selenide / zinc copper sulfide prepared by the present invention is used as a photocatalytic hydrogen production material, and its hydrogen production effect is significantly improved compared with zinc copper sulfide and cadmium indium selenide quantum dots. The amount of catalytic hydrogen production can reach 4623.2 μmol / g, and the material can maintain good cycle stability in the process of photocatalytic hydrogen production.
Description
A kind of cadmium indium selenide / zinc copper sulfide nanocomposite material and its preparation method and application technical field The present invention relates to photocatalysis technical field, be specifically related to a kind of cadmium indium selenide / zinc copper sulfide nanocomposite material and The preparation method thereof, and the application of the cadmium indium selenide / zinc copper sulfide in photocatalytic hydrogen production. Background technique [0002] Photocatalytic water splitting has attracted extensive research as an environmentally friendly and sustainable hydrogen production method. glue Bulk II‑VI semiconductor quantum dots have good photostability, broad excitation spectrum and narrow emission due to their own quantum size effect. It is considered to be an ideal photocatalyst material, such as cadmium telluride, cadmium sulfide, cadmium selenide quantum dots, etc. with binary Compared with quantum dots, ternary quantum dots have greate...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/057B01J27/13B01J37/10C01B3/04
CPCB01J27/0573B01J35/004B01J35/023B01J35/0006B01J37/10C01B3/042B01J27/13Y02E60/36
Inventor 韩吉姝王颖王磊赵瑞阳徐扬帆杨宇
Owner QINGDAO UNIV OF SCI & TECH
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com