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A deposition device for high-throughput preparation of Sibcn and a method for high-throughput preparation of Sibcn

A deposition device, high-throughput technology, applied in coating, gaseous chemical plating, metal material coating process, etc., to achieve the effect of increasing coating deposition rate, improving preparation efficiency, and reducing coating deposition time

Active Publication Date: 2022-05-10
上海瑞华晟新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no report on the high-throughput preparation of SiBCN coatings (thickness > 50 μm) by chemical vapor deposition in a short period of time and applied to the surface of the substrate as a coating.

Method used

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  • A deposition device for high-throughput preparation of Sibcn and a method for high-throughput preparation of Sibcn
  • A deposition device for high-throughput preparation of Sibcn and a method for high-throughput preparation of Sibcn
  • A deposition device for high-throughput preparation of Sibcn and a method for high-throughput preparation of Sibcn

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) Put the graphite sleeves with pipe diameters of 75mm, 80mm and 90mm into the corresponding holes on the circular plate, and block the redundant holes on the circular plate with graphite plates to prevent airflow from passing through;

[0048] (2) Cut the SiC fiber cloth into a size of 4mm×6mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0049] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio is 1:1, BCl 3 The molar ratio with MTS is 2:3, Ar and BCl 3 The molar ratio of H is 5:2, H 2 The molar ratio to Ar is 2:5. The coating deposition temperature is 850° C...

Embodiment 2

[0051] (1) Put the graphite sleeves with pipe diameters of 75mm, 90mm and 95mm into the corresponding holes on the circular plate, and block the redundant holes on the circular plate with graphite plates to prevent airflow from passing through;

[0052] (2) Pre-polish the surface of the C / SiC material, and then process it into a size of 3mm×5mm×6mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0053] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio is 2:1, BCl 3 The molar ratio of MTS and MTS is 3:1, Ar and BCl 3 The molar ratio of H is 5:4, H 2 The molar ratio to Ar i...

Embodiment 3

[0055] (1) Put graphite sleeves with pipe diameters of 75mm, 90mm, 95mm and 100mm into the corresponding holes on the circular plate, and block the redundant holes on the circular plate with graphite plates to prevent airflow from passing through;

[0056] (2) Polish the surface of the graphite strip in advance, and then process it into a size of 4mm×12mm×30mm, tie one end with a carbon rope, and tie the other end of the carbon rope to the support frame, and hang the sample at the center of the graphite sleeve;

[0057] (3) MTS and BCl are introduced into the reaction chamber 3 , NH 3 、H 2 , Ar. H 2 、CH 3 Cl 3 Si and BCl 3 After mixing, it is transported to the reaction chamber of the vertical reaction furnace through the first pipeline, and then the NH 3 It is transported to the reaction chamber through the second pipeline. NH 3 and BCl 3 The molar ratio of 1:1.5, BCl 3 The molar ratio of MTS and MTS is 1:10, Ar and BCl 3 The molar ratio of H is 5:4, H 2 The mola...

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Abstract

The invention relates to a high-throughput deposition device for preparing SiBCN and a high-throughput method for preparing SiBCN. The high-throughput deposition device for preparing SiBCN includes: a crucible body, a crucible body for covering the crucible body and a plurality of first A graphite plate with a through hole, and a graphite sleeve arranged in the first through hole of the graphite plate for placing the substrate with a flange; the crucible body is a hollow structure; or, the crucible body is a solid structure And the solid structure is provided with a second through hole corresponding to the first through hole in the graphite plate.

Description

technical field [0001] The invention relates to a high-throughput SiBCN deposition device and a high-throughput SiBCN preparation method. The SiBCN is mainly used on the surface of a material as a coating or a substrate to protect the material from oxidation in a high-temperature environment. Background technique [0002] Silicon boron carbon nitride (SiBCN) ceramics is a new type of structural ceramic material, which is a ceramic material with excellent high temperature resistance, creep resistance, oxidation resistance, thermal shock resistance and ablation resistance, and its oxidation resistance is excellent. than traditional SiC and Si 3 N 4 Ceramics, used as a coating can further increase the service temperature and service life of the material. In recent years, in the field of ceramic matrix composites, as the interface coating and matrix phase, more and more scholars pay attention and research. [0003] At present, the preparation methods of SiBCN ceramics mainly ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/36C23C16/455C04B35/58C04B35/622C04B35/80C04B35/84
CPCC04B35/58C04B35/62222C23C16/455C23C16/36C04B2235/465C04B2235/444C04B2235/483
Inventor 廖春景董绍明靳喜海倪德伟章龙龙林玲顾炎
Owner 上海瑞华晟新材料有限公司