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Double-color infrared detector preparation method and double-color infrared detector

An infrared detector and an infrared detection technology, which are applied in the field of infrared detectors, can solve the problems of increased difficulty of high-uniformity indium column structure, difficulty in obtaining small-pitch dual-color detector chips, and the like

Active Publication Date: 2021-07-20
北京智创芯源科技有限公司
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Problems solved by technology

After the pixel pitch is reduced, especially for the preparation of two-color devices with a pixel center pitch of 15um and below, due to the limitation of the aspect ratio of the lithographic pattern, it is more difficult to form a high-uniform indium column structure with a certain height, resulting in high-quality Small-pitch two-color detector chips are difficult to obtain

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  • Double-color infrared detector preparation method and double-color infrared detector
  • Double-color infrared detector preparation method and double-color infrared detector
  • Double-color infrared detector preparation method and double-color infrared detector

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Embodiment Construction

[0039] The core of the invention is to provide a method for preparing a two-color infrared detector. see figure 1 , figure 1 It is a process flow chart of a preparation method of a two-color infrared detector in the prior art. In the prior art, the electrodes connected to the two layers of band materials in each pixel of the two-color infrared detector need to be connected to the readout circuit through the indium column. For the two indium pillars of a pixel, it is necessary to set up an array of indium pillars with a higher density in the readout circuit, and the indium pillars are generally obtained by evaporation coating and stripping. When the pixel pitch is reduced, especially for the preparation of two-color devices with a pixel center pitch of 15um and below, due to the limitation of the aspect ratio of the lithographic pattern, it is more difficult to form a high-uniform indium column structure with a certain height, resulting in high-quality It is difficult to obt...

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Abstract

The invention discloses a double-color infrared detector preparation method, which is characterized in that a part of connecting columns are arranged on a double-color infrared detection chip, and a part of connecting columns are arranged on the surface of a reading circuit, so that the density of the connecting columns with a certain height arranged on the reading circuit can be effectively reduced; and meanwhile, when the connecting columns are arranged on the surface of the two-color infrared detection chip, the density of the two-color infrared detection chip is relatively low, so that the two-color infrared detection chip is suitable for preparing small-spacing two-color infrared detectors. The invention further provides a two-color infrared detector, and the preparation method of the two-color infrared detector also has the above beneficial effects.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a preparation method of a two-color infrared detector and a two-color infrared detector. Background technique [0002] Due to its adjustable band gap, infrared detectors have a detection spectral range extending from short-wave bands to very long-wave bands. They have the advantages of high photoelectric detection efficiency and are widely used in military and civil fields such as early warning detection, infrared reconnaissance, and imaging guidance. Target detection in complex backgrounds often requires two-color or multi-color detectors to improve target recognition. Two-color infrared detectors generally use a laminated dual-band material system. The photosensitive elements in the two bands need to be coupled with a dedicated readout circuit through structures such as indium columns. Indium columns are generally obtained by evaporation coating and stripping. After...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14636H01L27/14634H01L27/1469
Inventor 不公告发明人
Owner 北京智创芯源科技有限公司
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