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Fractal structure on-chip antenna applied to CMOS (Complementary Metal Oxide Semiconductor) process

A fractal structure and on-chip antenna technology, which is applied to antennas, resonant antennas, antenna components, etc., can solve problems such as low gain and low efficiency, meet the requirements of reducing manufacturing accuracy and reliability, increase and reduce antenna gain and bandwidth The effect of loss

Active Publication Date: 2021-07-30
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of low gain and low efficiency in the existing millimeter-wave frequency band (60GHz) on-chip antenna, and propose a CMOS process-based artificial magnetic conductor and dielectric resonator that is applied to the millimeter-wave frequency band. Fractal structure on-chip antenna to improve antenna gain and operating bandwidth

Method used

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  • Fractal structure on-chip antenna applied to CMOS (Complementary Metal Oxide Semiconductor) process
  • Fractal structure on-chip antenna applied to CMOS (Complementary Metal Oxide Semiconductor) process
  • Fractal structure on-chip antenna applied to CMOS (Complementary Metal Oxide Semiconductor) process

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Embodiment Construction

[0022] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0023] This embodiment provides a fractal structure on-chip antenna based on a CMOS process applied to 60 GHz and simultaneously loaded with an artificial magnetic conductor and a dielectric resonator. Its structure is as follows figure 1 As shown, it specifically includes: a ground layer 1, a silicon substrate layer 2, a silicon dioxide layer 3 and a passivation layer 4 stacked sequentially from bottom to top; it is characterized in that a fractal antenna 5 and a Artificial magnetic conductor structure 6, described artificial magnetic conductor structure 6 is positioned at the below of fractal antenna 5, and both are not in contact with each other; Also be provided with dielectric resonator 7 on described passivation layer 4, and be positioned at the edge that is apart from feeding port 200um; more specifically:

[0024] The structure of the...

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Abstract

The invention belongs to the technical field of wireless communication, provides a fractal structure on-chip antenna applied to a CMOS process, and the antenna is used for solving the problems of low gain and low efficiency of the existing millimeter wave frequency band on-chip antenna. The on-chip antenna provided by the invention has a fractal structure, has the characteristic of wide bandwidth, and is suitable for signal transmission of multiple frequency bands; meanwhile, an artificial magnetic conductor structure loaded under the fractal antenna can realize total reflection of electromagnetic waves, so that the loss of the electromagnetic waves in the silicon substrate with low resistance and high dielectric constant is reduced, and the gain of the antenna is increased; a dielectric resonator loaded on the passivation layer can gather electromagnetic waves upwards, so that the loss of the substrate is reduced, the directivity of antenna radiation is improved, and the antenna gain is improved. In conclusion, the invention provides the fractal structure on-chip antenna which is based on the CMOS technology, is applied to the millimeter wave frequency band and is loaded with the artificial magnetic conductor and the dielectric resonator at the same time, and the gain and the working bandwidth of the antenna can be remarkably improved.

Description

technical field [0001] The invention belongs to the technical field of wireless communication, relates to millimeter-wave integrated circuits and on-chip antenna technologies, and in particular provides a fractal-structure on-chip antenna based on CMOS technology and applied to the millimeter-wave frequency band and simultaneously loaded with artificial magnetic conductors and dielectric resonators. Background technique [0002] With the rapid development of wireless communication technology and the widespread popularization of intelligent terminals, resources in the low frequency band are used in large quantities, which makes the spectrum resources allocated by wireless communication systems increasingly crowded, and the system capacity becomes increasingly scarce. In order to solve the lack of system capacity As well as the shortage of spectrum resources, researchers turned their attention to the wider millimeter wave band. As a passive device for sending and receiving rad...

Claims

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Application Information

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IPC IPC(8): H01Q1/22H01Q1/38H01Q5/10H01Q9/04H01Q15/14H01Q23/00
CPCH01Q1/2283H01Q1/38H01Q9/0485H01Q15/14H01Q23/00H01Q5/10
Inventor 唐红艳官鑫徐文成张吴韵秋康凯
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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