Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large oxide layer thickness and poor electrical performance of semiconductor devices, and achieve the effect of improving stability and reliability
Active Publication Date: 2021-08-03
HUA HONG SEMICON WUXI LTD
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Problems solved by technology
[0005] The present application provides a method for manufacturing a semiconductor device, which can solve the problem in the related art that the electrical performance of the semiconductor device is poor due to the large thickness of the oxide layer of the attachment generated by photolithography rework
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[0022] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0023] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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Abstract
The invention discloses a manufacturing method of a semiconductor device, and the method comprises the steps: carrying out the first heat treatment, introducing oxygen in the process of the first heat treatment, and enabling the thickness of an oxide layer above a substrate of the semiconductor device to be increased; covering a target area on the substrate with a photoresist by adopting a photoetching process; and performing first ion implantation and second heat treatment in sequence. In the manufacturing process of the semiconductor device, oxygen is introduced during heat treatment before first ion implantation, so the thickness of the oxide layer above the substrate of the semiconductor device is increased, and the oxide layer above the substrate is enabled to fully grow; the method solves the problem of electrical performance fluctuation of the semiconductor device caused by the fact that the photoresist needs to be removed through ashing treatment and the oxide layer further grows in the subsequent photoetching process, and improves the stability and reliability of the semiconductor device.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a method for manufacturing a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor devices, the photolithography process often requires photolithography rework (rework), that is, the wrong photoresist in the photolithography process needs to be removed. [0003] In the related art, the steps of photolithography rework include: performing dry ashing (ash) treatment on the photoresist, and performing wet etching treatment to clean the surface of the wafer, so as to realize the removal of the photoresist. [0004] However, due to oxidation, an additional oxide layer (screen oxide) will be formed on the substrate of the semiconductor device after photolithography rework, and usually the temperature in the ashing process is high and the flow rate of oxygen is large, and the generated oxide layer The layer t...
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Patent Timeline
Login to View More IPC IPC(8): H01L21/324H01L21/027H01L21/265H01L21/8238
CPCH01L21/324H01L21/0274H01L21/26513H01L21/823814
Inventor 王柯米魁程刘锁王函闫玉琴白旭东袁明
Owner HUA HONG SEMICON WUXI LTD