Manufacturing method of semiconductor device
A production method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large oxide layer thickness and poor electrical performance of semiconductor devices, and achieve the effect of improving stability and reliability
Active Publication Date: 2022-07-19
HUA HONG SEMICON WUXI LTD
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[0005] The present application provides a method for manufacturing a semiconductor device, which can solve the problem in the related art that the electrical performance of the semiconductor device is poor due to the large thickness of the oxide layer of the attachment generated by photolithography rework
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[0022] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
[0023] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...
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Abstract
The present application discloses a method for fabricating a semiconductor device, comprising: performing a first heat treatment, introducing oxygen during the first heat treatment to increase the thickness of an oxide layer above a substrate of the semiconductor device; The target area on the substrate covers the photoresist; the first ion implantation and the second thermal treatment are performed in sequence. In the present application, the thickness of the oxide layer above the substrate of the semiconductor device is increased by introducing oxygen gas during the heat treatment before the first ion implantation is performed, so that the oxide layer above the substrate is sufficiently The growth solves the problem of electrical performance fluctuations of the semiconductor device caused by further growth of the oxide layer due to the need to remove the photoresist by ashing treatment in the subsequent photolithography process, and improves the stability and reliability of the semiconductor device.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for manufacturing a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor devices, the photolithography process often requires photolithography rework, that is, it is necessary to remove the wrong photoresist in the photolithography process. [0003] In the related art, the steps of photolithography rework include: performing dry ashing (ash) processing on the photoresist, and performing wet etching processing to clean the surface of the wafer, thereby realizing the removal of the photoresist. [0004] However, due to oxidation, an additional screen oxide will be formed on the substrate of the semiconductor device after photolithography rework, and usually during the ashing process, the temperature is higher and the oxygen flow rate is higher, and the resulting oxide The layer thickness is la...
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IPC IPC(8): H01L21/324H01L21/027H01L21/265H01L21/8238
CPCH01L21/324H01L21/0274H01L21/26513H01L21/823814
Inventor 王柯米魁程刘锁王函闫玉琴白旭东袁明
Owner HUA HONG SEMICON WUXI LTD