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Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large inrush current extraction, small inrush current extraction, and inability to obtain low positive current Voltage, the effect of improving the surge current capacity

Pending Publication Date: 2021-08-06
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, assuming the Figure 32 In the conventional silicon carbide semiconductor device 140' shown, the p-type region 113 and n - Type drift region 112 is formed on the front surface of the semiconductor substrate 130 and the bipolar operation of the pn junction causes the rise of the surge current, so that the extraction amount of the surge current becomes larger, but this effect is not significantly manifested.
[0013] for in Figure 32 One of the main reasons for the small amount of surge current extracted in the conventional silicon carbide semiconductor device 140 ′ is that the gap between the p-type region 113 and the front electrode that constitutes the pn junction of the JBS structure cannot be obtained. Ohmic contacts with sufficiently low resistance

Method used

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  • Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
  • Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
  • Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

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Experimental program
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Effect test

Embodiment approach 1

[0135] The configuration of the silicon carbide semiconductor device according to Embodiment 1 will be described. figure 1 , 2 It is a plan view showing the layout of the silicon carbide semiconductor device according to Embodiment 1 viewed from the front side of the semiconductor substrate. exist figure 1 An example of the layout of the p-type region (second conductivity type region) 13 constituting the JBS structure is shown in . exist figure 2 The middle figure shows an example of the layout of the bonding pads 41 in each portion on the front surface of the semiconductor substrate (semiconductor chip) 30 made of silicon carbide (SiC). exist figure 1 , 2 in, for p + The type contact region (second conductivity type high-concentration region) 14 is omitted from the illustration.

[0136] figure 1 , 2 In the shown silicon carbide semiconductor device 40 of Embodiment 1, a front electrode (first electrode) 16 (refer to image 3 ) and n - The SBD structure formed...

Embodiment approach 2

[0213] Next, the structure of the silicon carbide semiconductor device according to Embodiment 2 will be described. Figure 27 , 28 It is a plan view showing an example of the layout of the silicon carbide semiconductor device according to Embodiment 2 viewed from the front side of the semiconductor substrate. exist Figure 27 , 28 The p-type region 72 and the p-type region 74 are indicated by hatching, respectively.

[0214] The layout of the silicon carbide semiconductor devices 70 and 70 ′ according to the second embodiment is different from that of the silicon carbide semiconductor device 40 according to the first embodiment in that the p-type regions 72 and 74 constituting the JBS structure are viewed from the front side of the semiconductor substrate (semiconductor chip) 30 . Between the p-type regions 72, 74 and the front electrodes (not shown: equivalent to image 3 16) in the same manner as in Embodiment 1, a titanium film (not shown: equivalent to image 3 The ...

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Abstract

According to the present invention, a p-type region (13) constituting a JBS structure is exposed in an opening (17a') of an interlayer insulating film (17), and an aluminum film and a nickel film are sequentially laminated in this order as a metal laminated film (52) which becomes a material film and makes a contact with the p-type region (13) in the opening (17a') of the interlayer insulating film (17). Then, through heat treatment, aluminum atoms in the aluminum film are thermally diffused to form a p+ type contact region (14) in the surface region of the p-type region (13) in a self-aligned manner. Then, after removing the metal laminated film (52), a titanium film (31) that is Schottky-bonded to the n-type drift region (12) in the contact hole formed in the interlayer insulating film (17) and is ohmic-bonded to the p+ type contact region (14) is formed. Thus, in a silicon carbide diode having a JBS structure in which a Schottky junction and a pn junction are mixed, a low forward voltage due to an SBD structure can be maintained and the surge current withstand capability can be improved.

Description

technical field [0001] The present invention relates to a silicon carbide semiconductor device and a method for manufacturing the silicon carbide semiconductor device. Background technique [0002] In recent years, silicon carbide (SiC) semiconductors have attracted attention as semiconductor materials capable of fabricating (manufacturing) semiconductor devices (hereinafter, referred to as silicon carbide semiconductor devices) exceeding the limit of semiconductor devices using silicon (Si) semiconductors. In particular, silicon carbide semiconductors are expected to be applied to high withstand voltage (for example, 1700 V or higher) semiconductor devices due to their advantages of greater dielectric breakdown electric field strength and higher thermal conductivity than silicon semiconductors. [0003] In the case where the silicon carbide semiconductor device is a diode (hereinafter referred to as a silicon carbide diode), it is possible to configure n - type drift regio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L29/06H01L29/872H01L21/329H01L29/868H01L29/861
CPCH01L29/872H01L29/1608H01L29/0619H01L29/0615H01L29/0638H01L29/6606H01L29/47H01L29/0692H01L21/046H01L21/28H01L29/66143
Inventor 大瀬直之小岛贵仁
Owner FUJI ELECTRIC CO LTD