Unlock instant, AI-driven research and patent intelligence for your innovation.

Sealing composition and semiconductor device

A technology of sealing composition and epoxy resin, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of reduced durability, difficulty in taking into account high thermal conductivity and low elastic coefficient, and achieve The effect of high thermal conductivity

Pending Publication Date: 2021-08-10
RESONAC CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For example, if the inorganic filler is highly filled, the high thermal conductivity of the sealing material becomes possible, but the durability against the temperature cycle test may decrease due to the high elastic coefficient, and the high thermal conductivity and low elastic coefficient of the sealing material are in the middle trade-off relationship
Therefore, it may be difficult to achieve both high thermal conductivity and low modulus of elasticity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sealing composition and semiconductor device
  • Sealing composition and semiconductor device
  • Sealing composition and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~ Embodiment 5 and comparative example 1

[0187] The ingredients shown below (in advance mixed (dry doping) as shown in Table 1 (dry doping), using a biaxial kneading machine for kneading, and a powder-shaped sealing combination is manufactured by cooling pulverization. .

[0188] Further, the details of the components shown in Table 1 are as follows.

[0189] (A) epoxy resin

[0190] Epoxy resin A1-1: First Epoxy Resin, Mitsubishi Chemical Co., Ltd., epoxy group "440g / Eq", after hardening glass transition temperature "-57 ° C", there are two epoxy groups in the molecule, Rubber elastic skeleton, and the divalent coated epoxy resin epoxy resin A1-2 represented by the structural formula (1): First epoxy resin, Mitsubishi Chemical Co., Ltd., epoxy-based equivalent "489g / EQ ", After hardening, the glass transition temperature" 31 ° C "has two epoxy groups, soft bone, and the bone of the aromatic ring, and the divalent coated epoxy resin represented by the structural formula (1).

[0191] Epoxy resin A1-3: First Epoxy Res...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
epoxy equivalentaaaaaaaaaa
glass transition temperatureaaaaaaaaaa
softening pointaaaaaaaaaa
Login to View More

Abstract

A sealing composition contains: a first epoxy resin having an epoxy group equivalent of 300 g / eq or greater and a glass transition temperature of 40 DEG C or lower when cured using a polyfunctional phenol resin curing agent and a phosphorus curing promoter; a curing agent; and an inorganic filler.

Description

Technical field [0001] The present disclosure relates to a sealing composition and a semiconductor device. Background technique [0002] In recent years, accompanied by miniaturization and high intensification, fear of fever inside the semiconductor package. Due to the presence of heat generation, the performance of the electrical parts or the electrical parts of the electronic component having a semiconductor package is lowered, the member used in the semiconductor package requires high thermal conductivity. Therefore, the sealing material of the semiconductor package is required to perform high thermal conductivity. [0003] On the other hand, the components used in the semiconductor package also require durability for temperature cycle testing. [0004] For example, if high-filled inorganic filler, the high heat transfer of the sealing material is possible, but there is a case where the durability decreased for the temperature cycle test due to the increase of the elastic coef...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G59/40C08G59/68H01L23/29H01L23/31C09K3/10C08L63/00C08K3/013
CPCC08G59/40C08G59/68C08K3/013C08L63/00C09K3/10H01L23/31H01L23/29
Inventor 田中实佳石桥健太児玉拓也堀慧地
Owner RESONAC CORP