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Warping-adjustable Vcsel epitaxial structure and preparation method thereof

An epitaxial structure and adjustable technology, applied to the structure of the active region, laser components, electrical components, etc., can solve the problems of epitaxial wafer bending, affecting the uniformity of the epitaxial layer, and crystal quality deterioration, so as to reduce stress, Improve the uniformity of each parameter and reduce the effect of warpage

Pending Publication Date: 2021-08-24
威科赛乐微电子股份有限公司
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Problems solved by technology

This requires that DBR needs to grow more cycles, and the general DBR is made of Al (x) Ga (1-x) As / Al (y) Ga (1-y) As composition, although AlGaAs and GaAs crystal lattices are similar, after the number of cycles increases, large stress will still be formed in the epitaxial layer due to lattice mismatch. Epi layer uniformity

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  • Warping-adjustable Vcsel epitaxial structure and preparation method thereof
  • Warping-adjustable Vcsel epitaxial structure and preparation method thereof

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Embodiment Construction

[0028] The present invention will be described in detail below in conjunction with specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the application, not all of them. All other embodiments obtained under the premise of creative work all belong to the scope of protection of this application. In addition, it should be noted that the process parameters that are not specifically limited in the present invention all adopt the conventional process parameters of the VCSEL chip.

[0029] like figure 1 As shown, an adjustable warpage Vcsel epitaxial structure of the present invention includes a substrate 101, which is a GaAs substrate, on which a buffer layer 102, N-type doped DBR103, Active layer 104 , oxidation confinement layer 105 , P-type doped DBR 106 and ohmic contact layer 107 .

[0030] Among them, the N-type doped DBR 103 includes 25-35 pairs of Al 0.1 GaAs / Al 0.9 GaAs DBR layer, the optical thickness of each layer is λ / 4, an...

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Abstract

The invention discloses a warping-adjustable Vcsel epitaxial structure and a preparation method thereof, and relates to the technical field of laser chips. The Vcsel epitaxial structure capable of adjusting warping comprises a substrate, a buffer layer, an N-type doped DBR, an active layer, an oxidation limiting layer, a P-type doped DBR and an ohmic contact layer are sequentially deposited on the substrate, and stress compensation layers are periodically arranged in the N-type doped DBR and the P-type doped DBR. The invention discloses a Vcsel epitaxial structure capable of adjusting warpage and a preparation method thereof, through a periodically arranged stress compensation layer, the stress of the whole epitaxial layer can be reduced, the crystal quality of the epitaxial layer is improved, the warpage of an epitaxial wafer can be reduced, and the uniformity of each parameter of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the technical field of laser chips, in particular to a warp-adjustable Vcsel epitaxial structure and a preparation method thereof. Background technique [0002] Vertical-cavity surface-emitting lasers (VCSELs) are playing an increasingly important role in the new field of optoelectronics. Different from traditional edge-emitting lasers, VCSEL is a new type of semiconductor laser that emits light from a direction perpendicular to the surface of the semiconductor substrate. It has a single longitudinal mode, small divergence angle, circular symmetrical spot, high coupling efficiency, low threshold, and modulation rate. High, small size, two-dimensional integration, on-chip testing, low price and many other advantages. [0003] At present, most VCSELs are grown on GaAs substrates by using MOCVD equipment. Because the active region is relatively short, a higher reflectivity of the DBR is required to obtain greater gain and form la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/343H01S5/34
CPCH01S5/183H01S5/187H01S5/3406H01S5/343
Inventor 张新勇杨绍林刘浩飞苑汇帛
Owner 威科赛乐微电子股份有限公司