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Chemical polishing device and method thereof

A chemical polishing and polishing pad technology, applied in grinding/polishing safety devices, grinding devices, grinding/polishing equipment, etc., can solve the problems of slow speed and long time for finishing the surface of semiconductor substrates, and improve the finishing process. speed, reduced finishing time, improved finish

Active Publication Date: 2021-08-31
BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a chemical polishing device and method thereof, to solve the technical problems of long time and slow speed in the surface finishing of semiconductor substrates existing in the prior art to a certain extent

Method used

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  • Chemical polishing device and method thereof
  • Chemical polishing device and method thereof
  • Chemical polishing device and method thereof

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Embodiment

[0055] This embodiment provides a chemical polishing device and method thereof; please refer to Figure 1-Figure 6 , figure 1 A schematic structural view of the chemical polishing device provided in this embodiment, figure 2 For the exploded view of the chemical polishing device provided in this embodiment, in order to show the structure more clearly, image 3 A partial enlarged view of the chemical polishing device provided in this embodiment, Figure 4 Further enlarged the local structure of the chemical polishing device; Figure 5 Schematic diagram of the structure of the polishing liquid channel structure provided in this embodiment; Image 6 The process flow chart of the chemical polishing method provided in this embodiment. in, figure 1 with figure 2 The structure of the polishing liquid channel shown is the same as image 3 The slurry channel structures shown are different.

[0056] The chemical polishing device provided in this embodiment relates to the field...

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Abstract

The invention discloses a chemical polishing device and method therefore and relates to the field of semiconductor material manufacturing and processing. The chemical polishing device comprises a polishing pad, a polishing supporting piece, a polishing driver, a polishing adapter and polishing pressure devices. The first side of the polishing pad is fixedly connected to one side of the polishing supporting piece, and the second side of the polishing pad abuts against the polishing adapter or is arranged at an interval with the polishing adapter; the polishing driver can drive the polishing supporting piece to rotate; one or more polishing pressure devices used for fixing base materials are arranged in the polishing adapter, and the polishing pressure devices are configured to enable the base materials to be tightly attached to the second side of the polishing pad; and polishing solution channel structures used for conveying polishing solutions to the polishing pad are arranged in the polishing adapter. The chemical polishing method is suitable for the chemical polishing device. According to the chemical polishing device and the chemical polishing method, the technical problems that in the prior art, the finish machining time of the surfaces of semiconductor base materials is long, and the speed is low are solved to a certain extent.

Description

technical field [0001] The invention relates to the field of semiconductor material manufacturing and processing, in particular to a chemical polishing device and a method thereof. Background technique [0002] There are usually three processing techniques for polishing the surface: mechanical polishing, chemical mechanical polishing and chemical polishing. In the surface finishing of semiconductor substrates (such as semiconductor substrates, semiconductor wafers), mechanical polishing can easily cause scratches on the surface of semiconductor substrates and is difficult to remove, so mechanical polishing cannot be used for surface finishing of semiconductor substrates . Chemical mechanical polishing can be applied to the surface processing of ordinary semiconductor materials, but it is difficult to be used in the surface finishing of semiconductor substrates due to the residue of abrasive particles. Chemical polishing mainly uses the anisotropy of the surface composition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/10B24B37/005B24B49/16B24B55/02B24B49/00H01L21/67H01L21/306
CPCB24B37/10B24B37/005B24B49/16B24B55/02B24B49/006H01L21/67075H01L21/30604Y02P70/10
Inventor 潘峰赵玉国赵永进王文丽陈威薛书亮张博
Owner BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC